Enhanced Room-Temperature 1.6 μm Electroluminescence from Si-Based Double-Heterostructure Light-Emitting Diodes Using Iron Disilicide

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概要

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• We have fabricated Si/$\beta$-FeSi2/Si (SFS) double-heterostructure (DH) light-emitting diodes (LEDs) on Si(111) substrates with $\beta$-FeSi2 thickness ranging from 80 nm to 1 μm, and Si0.7Ge0.3/$\beta$-FeSi2/Si0.7Ge0.3(SGFSG) DH LEDs with a 200-nm-thick $\beta$-FeSi2 layer using lattice-matched Si0.7Ge0.3 layers by molecular-beam epitaxy. The electroluminescence (EL) peaked at an emission wavelength of approximately 1.6 μm at room temperature. As the thickness of the $\beta$-FeSi2 layer was increased in the SFS DH LEDs, the emission power of EL increased for a given current density $J$. EL with an emission power of over 0.4 mW and an external quantum efficiency of approximately 0.1% was achieved for the SFS DH LED with a 1-μm-thick $\beta$-FeSi2 layer. The smallest $J$ value necessary for EL output, which is approximately 1 A/cm2, was achieved for the SGFSG DH LEDs.

• 2010-04-25

著者

• Suzuno Mitsushi

  Institute Of Applied Physics University Of Tsukuba

• Koizumi Tomoaki

  Institute Of Applied Physics University Of Tsukuba

• Mitsushi Suzuno

  Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

• Kawakami Hideki

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Takashi Suemasu

  Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

• Hideki Kawakami

  Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

• Tomoaki Koizumi

  Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

関連論文

• Fabrication of n^+-BaSi_2/p^+-Si Tunnel Junction on Si(111) Surface by Molecular Beam Epitaxy for Photovoltaic Applications
• Effect of Introducing $\beta$-FeSi2 Template Layers on Defect Density and Minority Carrier Diffusion Length in Si Region near p-$\beta$-FeSi2/n-Si Heterointerface
• Impact of Thin Island-Like BaSi2 Template on the Formation of n+-BaSi2/p+-Si Tunnel Junction on Si(111) Surface by Molecular Beam Epitaxy
• Epitaxial Growth and Photoresponse Properties of BaSi2 Layers toward Si-Based High-Efficiency Solar Cells
• Room-Temperature 1.6 μm Electroluminescence from $p^{+}$-Si/$\beta$-FeSi2/$n^{+}$-Si Diodes on Si(001) without High-Temperature Annealing
• Improved Room-Temperature 1.6 μm Electroluminescence from $p$-Si/$\beta$-FeSi2/$n$-Si Double Heterostructures Light-Emitting Diodes
• Improved Reproducibility in CaF2/Fe3Si/CaF2 Ferromagnetic Resonant Tunneling Diodes on Si(111) Substrates by Selected-Area Molecular Beam Epitaxy
• Enhanced Room-Temperature 1.6 μm Electroluminescence from Si-Based Double-Heterostructure Light-Emitting Diodes Using Iron Disilicide
• Dependence of Resonant Voltage on Quantum-Well Width in CaF2/Fe3Si/CaF2 Resonant Tunneling Diodes

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