Kawakami Hideki | Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

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概要

• Kawakami Hidekiの詳細を見る
• 同名の論文著者
• Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japanの論文著者

関連著者

• Suzuno Mitsushi

  Institute Of Applied Physics University Of Tsukuba

• Kawakami Hideki

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Chen Jun

  National Agricultural Res. Center For Hokkaido Region Sapporo Jpn

• SEKIGUCHI Takashi

  National Insitute for Materials Science

• Koizumi Tomoaki

  Institute Of Applied Physics University Of Tsukuba

• Sekiguchi Takashi

  National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan

• Suzuno Mitsushi

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Mitsushi Suzuno

  Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

• SUEMASU Takashi

  Institlite of Materials Science, University of Tsukuba

• Suemasu Takashi

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Akutsu Keiichi

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Jiptner Karolin

  National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan

• Takashi Suemasu

  Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

• Hideki Kawakami

  Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

• Chen Jun

  National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan

• Tomoaki Koizumi

  Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

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著作論文

• Effect of Introducing $\beta$-FeSi2 Template Layers on Defect Density and Minority Carrier Diffusion Length in Si Region near p-$\beta$-FeSi2/n-Si Heterointerface
• Enhanced Room-Temperature 1.6 μm Electroluminescence from Si-Based Double-Heterostructure Light-Emitting Diodes Using Iron Disilicide

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