Suemasu Takashi | Presto Japan Science And Technology Agency

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概要

• 同名の論文著者
• Presto Japan Science And Technology Agencyの論文著者

関連著者

• Suemasu Takashi

  Presto Japan Science And Technology Agency

• Murase Shigemitsu

  Institute Of Applied Physics University Of Tsukuba

• SUEMASU Takashi

  Institute of Applied Physics, University of Tsukuba

• SUZUNO Mitsushi

  Institute of Applied Physics, University of Tsukuba

• Suemasu Takashi

  Institute Of Applied Physics University Of Tsukuba

• Tsukada Dai

  Institute Of Applied Physics University Of Tsukuba

• Matsumoto Yuta

  Institute Of Applied Physics University Of Tsukuba

• Suzuno Mitsushi

  Institute Of Applied Physics University Of Tsukuba

• Koizumi Tomoaki

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Koizumi Tomoaki

  Institute Of Applied Physics University Of Tsukuba

• KOBAYASHI Michitaka

  Institute of Applied Physics, University of Tsukuba

• TSUKADA Dai

  Institute of Applied Physics, University of Tsukuba

• MATSUMOTO Yuta

  Institute of Applied Physics, University of Tsukuba

• Kobayashi Michitaka

  Institute Of Applied Physics University Of Tsukuba

• Sasaki Ryo

  Institute Of Applied Physics University Of Tsukuba

• Ichikawa Yoshitake

  Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Jap

• SUEMASU Takashi

  University of Tsukuba, Institute of Applied Physics

• MURASE Shigemitsu

  University of Tsukuba, Institute of Applied Physics

• UGAJIN Yuta

  University of Tsukuba, Institute of Applied Physics

• SUZUNO Mitsushi

  University of Tsukuba, Institute of Applied Physics

• Ichikawa Yoshitake

  Institute Of Applied Physics University Of Tsukuba

• Takeishi Mitsutomo

  Institute Of Applied Physics University Of Tsukuba

• Ugajin Yuta

  University Of Tsukuba Institute Of Applied Physics

• SUEMASU Takashi

  Institlite of Materials Science, University of Tsukuba

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著作論文

• Control of Electron and Hole Concentrations in Semiconducting Silicide BaSi2 with Impurities Grown by Molecular Beam Epitaxy
• Room-Temperature 1.6 μm Electroluminescence from $p^{+}$-Si/$\beta$-FeSi2/$n^{+}$-Si Diodes on Si(001) without High-Temperature Annealing
• Improved Room-Temperature 1.6 μm Electroluminescence from $p$-Si/$\beta$-FeSi2/$n$-Si Double Heterostructures Light-Emitting Diodes
• Si-Based Infrared Light Emitters Using Semiconducting Iron Disilicide
• Photoresponse Properties of Semiconducting BaSi2 Epitaxial Films Grown on Si(111) Substrates by Molecular Beam Epitaxy

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