Photoresponse Properties of Semiconducting BaSi2 Epitaxial Films Grown on Si(111) Substrates by Molecular Beam Epitaxy

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概要

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• n-Type BaSi2 epitaxial films with 900 nm thickness were grown on Si(111) by molecular beam epitaxy, and striped Au electrodes were formed on the surface. Photocurrents were clearly observed for photons with energies greater than 1.25 eV under bias voltages applied between the electrodes, and this increased sharply with increasing photon energy to attain a maximum at approximately 1.70 eV. The external quantum efficiency increased with the bias voltage and reached approximately 7% at 1.70 eV for a bias voltage of 7 V. This value is 100 times larger than the highest value ever reported for semiconducting silicide films.

• Japan Society of Applied Physicsの論文
• 2009-02-25

著者

• Tsukada Dai

  Institute Of Applied Physics University Of Tsukuba

• Matsumoto Yuta

  Institute Of Applied Physics University Of Tsukuba

• Suemasu Takashi

  Presto Japan Science And Technology Agency

• Sasaki Ryo

  Institute Of Applied Physics University Of Tsukuba

• Takeishi Mitsutomo

  Institute Of Applied Physics University Of Tsukuba

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• Si-Based Infrared Light Emitters Using Semiconducting Iron Disilicide
• Photoresponse Properties of Semiconducting BaSi2 Epitaxial Films Grown on Si(111) Substrates by Molecular Beam Epitaxy
• Wet Chemical Etching and X-ray Photoelectron Spectroscopy Analysis of BaSi2 Epitaxial Films Grown by Molecular Beam Epitaxy

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