Control of Electron and Hole Concentrations in Semiconducting Silicide BaSi2 with Impurities Grown by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
Highly $a$-axis-oriented $n$- and $p$-type BaSi2 films were grown on Si(111) substrates by molecular beam epitaxy using Sb and In doping atoms, respectively. The hole concentration of In-doped BaSi2 was controlled in the range between $10^{16}$ and $10^{17}$ cm-3 at room temperature by changing the temperature of the In Knudsen cell crucible. In contrast, the electron concentration of Sb-doped BaSi2 was controlled in the range between $10^{16}$ and $10^{20}$ cm-3 by the substrate temperature. The electron and hole mobilities decreased with increasing electron and hole density, respectively.
- Japan Society of Applied Physicsの論文
- 2008-05-25
著者
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KOBAYASHI Michitaka
Institute of Applied Physics, University of Tsukuba
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TSUKADA Dai
Institute of Applied Physics, University of Tsukuba
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MATSUMOTO Yuta
Institute of Applied Physics, University of Tsukuba
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Kobayashi Michitaka
Institute Of Applied Physics University Of Tsukuba
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Tsukada Dai
Institute Of Applied Physics University Of Tsukuba
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Matsumoto Yuta
Institute Of Applied Physics University Of Tsukuba
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Suemasu Takashi
Presto Japan Science And Technology Agency
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Ichikawa Yoshitake
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Jap
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Ichikawa Yoshitake
Institute Of Applied Physics University Of Tsukuba
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