Kobayashi Michitaka | Institute Of Applied Physics University Of Tsukuba
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概要
関連著者
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Kobayashi Michitaka
Institute Of Applied Physics University Of Tsukuba
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Morita Kousuke
Institute Of Applied Physics University Of Tsukuba
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SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
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KOBAYASHI Michitaka
Institute of Applied Physics, University of Tsukuba
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末益 崇
筑波大学大学院数理物質科学研究科電子・物理工学専攻
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SUEMASU Takashi
Institute of Applied Physics, University of Tsukuba
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MORITA Kousuke
Institute of Applied Physics, University of Tsukuba
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Saida Morihiko
Institute Of Applied Physics University Of Tsukuba
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TSUKADA Dai
Institute of Applied Physics, University of Tsukuba
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MATSUMOTO Yuta
Institute of Applied Physics, University of Tsukuba
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Suemasu Takashi
Institute Of Applied Physics University Of Tsukuba
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Tsukada Dai
Institute Of Applied Physics University Of Tsukuba
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Matsumoto Yuta
Institute Of Applied Physics University Of Tsukuba
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Suemasu Takashi
Presto Japan Science And Technology Agency
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Ichikawa Yoshitake
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Jap
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Ichikawa Yoshitake
Institute Of Applied Physics University Of Tsukuba
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Sasaki Masahiro
Institute Of Applied Physics And Center For Tsukuba Advanced Research Alliance University Of Tsukuba
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Suemasu Takashi
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
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Saida Morihiko
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
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Morita Kousuke
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
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Sasaki Masahiro
Institute of Applied Physics and Center for Tsukuba Advanced Research Alliance (TARA), University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Sasaki Masahiro
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
著作論文
- Optical Absorption Edge of Ternary Semiconducting Silicide Ba_Sr_xSi_2
- Control of Electron and Hole Concentrations in Semiconducting Silicide BaSi2 with Impurities Grown by Molecular Beam Epitaxy
- Band Diagrams of BaSi2/Si Structure by Kelvin Probe and Current–Voltage Characteristics
- Optical Absorption Edge of Ternary Semiconducting Silicide Ba1-xSrxSi2