Si-Based Infrared Light Emitters Using Semiconducting Iron Disilicide
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Suemasu Takashi
Presto Japan Science And Technology Agency
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Murase Shigemitsu
Institute Of Applied Physics University Of Tsukuba
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SUEMASU Takashi
University of Tsukuba, Institute of Applied Physics
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MURASE Shigemitsu
University of Tsukuba, Institute of Applied Physics
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UGAJIN Yuta
University of Tsukuba, Institute of Applied Physics
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SUZUNO Mitsushi
University of Tsukuba, Institute of Applied Physics
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Ugajin Yuta
University Of Tsukuba Institute Of Applied Physics
関連論文
- Control of Electron and Hole Concentrations in Semiconducting Silicide BaSi2 with Impurities Grown by Molecular Beam Epitaxy
- Room-Temperature 1.6 μm Electroluminescence from $p^{+}$-Si/$\beta$-FeSi2/$n^{+}$-Si Diodes on Si(001) without High-Temperature Annealing
- Improved Room-Temperature 1.6 μm Electroluminescence from $p$-Si/$\beta$-FeSi2/$n$-Si Double Heterostructures Light-Emitting Diodes
- Si-Based Infrared Light Emitters Using Semiconducting Iron Disilicide
- Photoresponse Properties of Semiconducting BaSi2 Epitaxial Films Grown on Si(111) Substrates by Molecular Beam Epitaxy