Epitaxial Growth and Magnetic Properties of Ferromagnetic Fe3N on Si(111) by Molecular Beam Epitaxy Using AlN/3C–SiC Intermediate Layers

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概要

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• $c$-Axis-oriented hexagonal Fe3N films were epitaxially grown on Si(111) substrates by molecular beam epitaxy using AlN/3C–SiC intermediate layers. It was found that the magnetic moments of Fe3N epitaxial film faced parallel to the film plane, and that the saturation magnetization per Fe atom was approximately 1.8 $\mu_{\text{B}}$ at room temperature, where $\mu_{\text{B}}$ is the Bohr magneton. The nitrogen composition in FexN ($2<x<3$), and thus its magnetic properties, could be controlled even after the growth by irradiation of a radical nitrogen beam.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2006-07-25

著者

• Kakeya Itsuhiro

  Institute Of Materials Science University Of Tsukuba

• Yamaki Kazuhiro

  Institute Of Materials Science University Of Tsukuba

• Yui Tatsuya

  Institute Of Applied Physics University Of Tsukuba

• Ichikawa Yoshitake

  Institute Of Applied Physics University Of Tsukuba

• Yamaguchi Kimiaki

  Institute Of Applied Physics University Of Tsukuba

• Kadowaki Kazuo

  Institute Of Materials Science And Graduate School Of Pure And Applied Sciences University Of Tsukuba

• SUEMASU Takashi

  Institlite of Materials Science, University of Tsukuba

• Ichikawa Yoshitake

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Kakeya Itsuhiro

  Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

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