CaF2/Fe3Si/CaF2 Ferromagnetic Resonant Tunneling Diodes on Si(111) by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
Double-barrier resonant-tunneling diodes were fabricated from Fe3Si (10 nm)/CaF2 (5 nm)/Fe3Si (4 nm)/CaF2 (5 nm) on n+-Si(111) substrates by molecular beam epitaxy. Negative differential resistance was observed in the current--voltage ($J$--$V$) characteristics at room temperature (RT). The peak-to-valley current ratio was found to reach a value as large as approximately 1000 at RT. Peaks were observed in the $d^{2}J/dV^{2}$--$V$ plots in the two bias regions of 0.6--0.8 and 2.2--2.8 V. They are well explained by the energy separation (${\sim}1$ eV) between the two quantum levels above the Fermi level in the 4-nm-thick Fe3Si quantum well that was predicted using the Tsu--Esaki formula.
- Japan Society of Applied Physicsの論文
- 2009-06-25
著者
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Akinaga Hiro
Nanodevice Innovation Research Center And Nanotechnology Research Institute National Institute Of Ad
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SUEMASU Takashi
Institute of Applied Physics, University of Tsukuba
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Suemasu Takashi
Institute Of Applied Physics University Of Tsukuba
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Sadakuni Kenji
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japa
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Harianto Teddy
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japa
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Sadakuni Kenji
Institute Of Applied Physics University Of Tsukuba
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Harianto Teddy
Institute Of Applied Physics University Of Tsukuba
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Akinaga Hiro
Nanodevice Innovation Research Center (NIRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
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