Influence of AlN Growth Conditions on the Polarity of GaN Grown on AlN/Si(111) by Metalorganic Molecular Beam Epitaxy
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概要
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We have investigated the influence of the growth conditions of AlN intermediate layers on the polarity of GaN layers grown on AlN/Si(111) by metalorganic molecular beam epitaxy (MOMBE). It was found from the results of co-axial impact collision ion scattering spectroscopy (CAICISS) that the polarity depended on the supply sequence of the source materials, AlN thickness and nitrogen source. When di-methyl-hydrazine (DMHy) was used as a N source, which was supplied before the Al source, N-polarity GaN became dominant. Even when the N source was supplied first, the Ga polarity became dominant when the thickness of AlN exceeded 45 nm. It was also found that when ammonia (NH3) was used as a N source, the Ga polarity became dominant even in N polarity AlN intermediate layers.
- Japan Society of Applied Physicsの論文
- 2004-02-01
著者
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TOMIOKA Hiroyuki
Institute of Applied Physics, University of Tsukuba
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Yamaguchi Kimiaki
Institute Of Applied Physics University Of Tsukuba
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SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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Sato Tomonari
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Souda Ryutaro
Advanced Materials Laboratory and Nanomaterials Laboratory, Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Souda Ryutaro
Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-8577, Japan
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