In Situ Observation of Atomic Layer Epitaxy of GaAs Using GaCl_3 by Surface Photo-Absorption Method
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概要
- 論文の詳細を見る
Surface photo-absorption (SPA) method was used to observe the GaAs growth process during alternate supply of GaCl_3 and AsH_3. The reflection intensity after the GaCl_3 supply and H_2 purge is different from that of the Ga atom surface formed by a desorption of arsenic from the GaAs surface. Furthermore, the spectral dependence of the SPA signal in our growth system is different from that in the triethylgallium (TEGa)-AsH_3 system. These results indicate that the GaAs surface after the GaCl_3 supply and H_2 purge is not covered by Ga atoms. So far as growth using GaCl_3 is concerned, the surface after the GaCl_3 supply is inferred to be a Cl-terminated Ga surface.
- 社団法人応用物理学会の論文
- 1993-02-01
著者
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KOBAYASHI RYUJI
Institute of Health Sciences, Faculty of Medicine, Hiroshima University
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Kobayashi Ryuji
Institute Of Materials Science University Of Tsukuba
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HASEGAWA Fumio
Tohoku University of Art and Design
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Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
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Narahara Satoru
Institute Of Materials Science University Of Tsukuba
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ISHIKAWA Katsumi
Institute of Materials Science, University of Tsukuba
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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