One Possibility of Obtaining Bulk GaN: Halide VPE Growth at 1000℃ on GaAs (111) Substrates(Special Issue on Blue Laser Diodes and Related Devices/Technologies)

概要

論文の詳細を見る
Halide vapor phase epitaxy (HVPE) is the most promising method for obtaining bulk GaN, and a 2 inch free standing wafer has been already obtained by growing on a sapphire substrate and separating by laser irradiation. It is, however, neither very easy nor very productive. Here we propose another more productive way of growing on GaAs substrate, though a free standing GaN is not yet perfectly obtained. It was found that hexagonal GaN with a smooth surface can be grown on GaAs (111) substrates at as high as 1000℃ by introducing GaN layer grown at an intermediate temperature such as 850℃. Surface of the GaN layer grown at 850℃ was rough but it became smooth surface when GaN was grown on it at 1000℃, though sometimes there were several hexagonal pits on the surface. The θ-2θ and ω X ray diffraction (XRD) of the grown layer showed only hexagonal GaN(0002).
2000-04-25