Passivation Properties of Plasma CVD AlN Films for GaAs

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概要

• 論文の詳細を見る

• Plasma CVD AlN films were examined as passivation films for the heat treatment of GaAs. It was found that when the AlN/GaAs was annealed at 850℃ for 15 min. in H_2 atmosphere, the film was more oxidized than when it was annealed in Ar atmosphere. No Raman peak shift and no TO phonon were observed when the AlN/GaAs was annealed in Ar atmosphere, whereas they were observed for the annealing in H_2. These results suggest that the PCVD-AlN can be used asa passivation film for the annealing of GaAs after ion implantations, and that Ar is a beter ambient gas for the annealing.

• 社団法人応用物理学会の論文
• 1987-09-20

著者

• ARAI Toshihiro

  Institute of Applied Physics, The University of Tsukuba

• Kubo K

  Research And Development Center Toshiba Corporation

• HASEGAWA Fumio

  Institute of Applied Physics, University of Tsukuba

• Nannichi Yasuo

  Institute of Materials Science, University of Tsukuba

• Takahashi Teruo

  Department Of Organic And Polymeric Materials Tokyo Institute Of Technology

• Nannichi Yasuo

  University Of Tsukuba

• Nannichi Yasuo

  Institute Of Materials Science Institute Of Applied Physics University Of Tsukuba

• Nannichi Yasuo

  Institute Of Materials Science And Center For Tara Tsukuba Advanced Research Alliance University Of

• Takahashi Tetsuo

  National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center

• Taguchi Tomohiro

  Department Of Organic Materials Tokyo Institute Of Technology

• KUBO Kohji

  Department of Applied Physics, School of Science and Engineering, Waseda University

• HASEGAWA Fumio

  Tohoku University of Art and Design

• Kubo K

  Univ. Tsukuba Ibaraki Jpn

• Arai Toshihiro

  Institute For Optical Research Kyoiku University

• Hasegawa Fumio

  Institute Of Applied Physics University Of Tsukuba

• Takahashi T

  Japan Advanced Institute Of Science And Technology

• TAKAHASHI Tsuyoshi

  Institute of Materials Science, University of Tsukuba

• KUBO Kiyokazu

  Institute of Materials Science, University of Tsukuba

• OHNARI Seinosuke

  Institute of Materials Science, Institute of Applied Physics, University of Tsukuba

• Arai Toshihiro

  Institute Of Materials Science Institute Of Applied Physics University Of Tsukuba

• Ohnari Seinosuke

  Institute Of Materials Science Institute Of Applied Physics University Of Tsukuba

• Arai Toshihiro

  Institte For Optical Research Kyoiku University

• HASEGAWA Fumio

  Institlite of Materials Science, University of Tsukuba

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