Lattice Vibrations on Semiconducting Spinel, HgCr_2Se_4

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概要

• 論文の詳細を見る
• 社団法人日本物理学会の論文
• 1971-12-05

著者

• ONARI Seinosuke

  Institute of Applied Physics, The University of Tsukuba

• ARAI Toshihiro

  Institute of Applied Physics, The University of Tsukuba

• KUDO Keiei

  Institute for Optics, Tokyo Kyoiku University

• Kudo Keiei

  Institute For Optical Research Tokyo Kyoiku University

• Kudo Keiei

  Institute For Optical Research Tokyo University Of Education

• Kudo Keiei

  Institte For Optical Research Kyoiku University

• Arai Toshihiro

  Institute For Optical Research Tokyo Kyoiku University

• Arai Toshihiro

  Institute For Optical Research Kyoiku University

• Arai Toshihiro

  Institute For Optical Research Tokyo University Of Education

• Onari Seinosuke

  Institute For Optical Research Tokyo University Of Education

• WAKAMURA Kunio

  Institute for Optical Research, Tokyo Kyoiku University

• Wakamura Kunio

  Institute For Optical Research Tokyo Kyoiku University:(present Address) Department Of Fundamental N

• Arai Toshihiro

  Institte For Optical Research Kyoiku University

• Wakamura Kunio

  Institte for Optical Research, Kyoiku University

関連論文

• Far Infrared Optical Properties of Amorphous As-Se System
• Raman Scattering in Amorphous As-Se System
• Pressure Effects on CdS Microcrystals Embedded in Germanate Glasses
• Raman Scattering of Amorphous Semiconductors Ge-S System under High Hydrostatic Pressure
• Magnetoabsorption in Single-Crystal HgCr_2Se_4
• Lattice Dynamics and the Far Infrared Spectra of Pr_xLn_Ba_2Cu_3O_ (Ln=Lanthanide)
• Photoluminescence of TlInS_2 at Low Temperatures
• Sulfur-K X-Ray Spectra and Electronic Structure of a Semiconductor Ag_2S : Electrical Properties of Condensed Matter
• Correlation between X-Ray Reflectivity and Rutherford Backscattering Spectroscopy for Density Measurement of Thin Films
• Volume Expansion and Ag Doping Amounts in the Photodoping Process in Amorphous As_2S_3
• In-Situ Observation of Photodoping Process by Infrared Attenuated Total Reflection Method
• Low-Temperature Crystallization of Hydrogenated Amorphous Silicon Induced by Nickel Silicide Formation
• Elastic Recoil Detection Analysis of Hydrogen Content in Hydrogenated Amorphous Silicon Fims
• Initial Stage of the Interfacial Reaction between Nickel and Hydrogenated Amorphous Silicon
• Photoacoustic and Luminescence Spectra of CdS Fine Particles
• Light Emitting Properties of Silicon Nanocrystallite Layer Synthesized by Pulsed Laser Ablation in Inert Background Gas
• Non-Radiative Recombination Processes and Related Phenomena in Ge Doped As_2Se_3 Glasses
• Vibrational Spectra and Effective Charges in Some Spinels : CHALCOGENIDE SPINELS : OPTICAL, ELECTRICAL AND MAGNETIC PROPERTIES
• Passivation Properties of Plasma CVD AlN Films for GaAs
• One Phonon Raman Scattering of CdS Microcrystals Embedded in a Germanium Dioxide Glass Matrix
• Experimentally Deduced Adiabatic Potential of Ge Doped As_2se_3 Glasses
• Estimation of the Filling Factor of the High T_c Superconducting Phase in Y-Ba-Cu-O Mixed System
• Estimation of Non-Radiative Transition Rate in Tetracene-Doped Anthracene by Photoacoustic Spectroscopy : Chemistry (incl. physical process)
• Lattice Vibrations in Spinel Type Crystals Cd_xZn_Cr_2Se_4
• Infrared Optical Properties of Antiferromagnetic Semiconductor MnTe_2
• Lattice Vibrations of Magnetic Semiconductor Chalcogenide Spinels, Hg_xZn_Cr_2Se_4
• Far Infrared Absorption and Reflection on Some Semiconducting Spinels, CdCr_2Se_4 and CdCr_2S_4
• Lattice Vibrations on Semiconducting Spinel, HgCr_2Se_4
• Far Infrared and Raman Spectra in (As_2S_3)_(Sb_2S_3)_x Glasses
• Far Infrared Spectra in (As_2Se_3)_(Sb_2Se_3)_x Glasses
• Raman Scattering in Amorphous (As_2Se_3)_(Sb_2Se_3)_x System
• Transport Properties of Ge Doped As_2Se_3 Glasses
• Temperature Dependence of Lattice Frequencies in Magnetic Crystals MCr_2Se_4(M=Hg,Cd)
• Optical Absorption Spectra on Gold Doped Silicon Crystal in Near Infrared Energy Region
• Crystal Structure and Lattice Absorption of Partially-Inverse Spinel Compound MgIn_2S_4
• Optical and Electrical Properties of Inverse Spinel Compound MgIn_2S_4 : CHALCOGENIDE SPINELS : OPTICAL, ELECTRICAL AND MAGNETIC PROPERTIES
• Measurement of Shear Wave Velocities of Chalcogenide Glasses at Low Temperature by use of Sphere Resonance and Pulse Echo Methods : Physical Acoustics
• Infrared Reflection Spectra of High T_c Superconductor YBa_2Cu_3O_x Sintered at Various Temperatures
• Layer Correlation in a-As_2(Se_xS_)_3 Systems
• Second-Order Vibration Spectra of Amorphous As-Se Systems
• Photoconductive Properties of Amorphous As-Se System
• ZnO Thin Films Prepared by Ion-Assisted Deposition Method
• Studies on the Electronic Energy States of Germanium Microcrystal and the Chemical Shift due to Surface Oxidization by Means of Photoelectron Spectroscopy
• Annealing Effect on the Density of Upper Valence Band States of Evaporated Amorphous As-Se Film
• Change of Composition Ratio in Amorphous Arsenic Selenide Films Caused by Heat-Annealing and Photo-Irradiation
• The Infrared Absorption of GaP Single Crystals with Silicon and Oxygen Impurities
• Raman and Infrared Spectra of Amorphous Semiconductors (GeS_2)_(Sb_2S_3)_x Systems
• Properties of Germanium Single Crystals Heavily Doped with Tin
• Precipitation of Tin in Heavily Doped Germanium Single Crystals
• The Change of the Charge Fluctuation with Ag Doping in Amorphous As_2S_3
• Far Infrared Spectrum of C_
• Infrared Lattice Vibrations and Dielectric Dispersion in Antiferromagnetic Semiconductor MnSe_2
• Reflection Spectra of Calcite in Far-Infrared Region
• The Study of the Optical Properties of Conducting Tin Oxide Films and their Interpretation in Terms of a Tentative Band Scheme
• Estimation of the Filling Factor of the High $T_{\text{c}}$ Superconducting Phase in Y–Ba–Cu–O Mixed System
• Temperature Dependence of Photoacoustic and Photoluminescence Signals for CdSxSe1-x Microcrystals
• Effect of Size Confinement on the Electronic States of CdS Cluster in a Germanium Oxide Matrix
• Density of Upper Valence Band States of Amorphous Arsenic Selenide System Determined by Ultraviolet Photoelectric Emission Spectroscopy
• Diffusion of Metal Ions and Stimulated Currents into a-As2Se3 Thin Films

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