Temperature Dependence of Photoacoustic and Photoluminescence Signals for CdSxSe1-x Microcrystals
スポンサーリンク
概要
- 論文の詳細を見る
Temperature dependence of absorption, photoacoustic(PA), photoluminescence excitation(PLE) and photoluminescence(PL) spectra were measured for filter glasses which include sulfur-rich CdSxSe1-x microcrystals. Absolute quantum efficiency for radiative recombination was obtained by comparing photoacoustic spectra with photoluminescence spectra. Quantum efficiency of radiative recombination for small microcrystals is found to be higher than that for large microcrystals. By solving the rate equations, very small band-to-band nonradiative transition was suggested in these microcrystals. We regarded this as the main reason for the large quantum efficiency.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-03-20
著者
-
OGAWA Tsutomu
Institute for Applied Optics
-
Umezu Ikurou
Department Of Applied Physics Konan University:hightechnology Research Center Konan University
-
Arai Toshihiro
Institte For Optical Research Kyoiku University
-
Arai Toshihiro
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305
-
Umezu Ikurou
Department of Materials Science and Technology, Faculty of Industrial Science and Technology, Science University of Tokyo, Noda, Chiba 278
関連論文
- Far Infrared Optical Properties of Amorphous As-Se System
- Raman Scattering in Amorphous As-Se System
- Pressure Effects on CdS Microcrystals Embedded in Germanate Glasses
- Raman Scattering of Amorphous Semiconductors Ge-S System under High Hydrostatic Pressure
- Magnetoabsorption in Single-Crystal HgCr_2Se_4
- Lattice Dynamics and the Far Infrared Spectra of Pr_xLn_Ba_2Cu_3O_ (Ln=Lanthanide)
- Photoluminescence of TlInS_2 at Low Temperatures
- Sulfur-K X-Ray Spectra and Electronic Structure of a Semiconductor Ag_2S : Electrical Properties of Condensed Matter
- In-Situ Ellipsometric Observations of Thickness Change in the Layers of Ag/a-As_2S_3 Film System with Progression of Photodoping
- Correlation between X-Ray Reflectivity and Rutherford Backscattering Spectroscopy for Density Measurement of Thin Films
- Inter-Dot Distance Dependence of Photoluminescence Properties in CdSe Quantum Dot Systems
- Volume Expansion and Ag Doping Amounts in the Photodoping Process in Amorphous As_2S_3
- In-Situ Observation of Photodoping Process by Infrared Attenuated Total Reflection Method
- Low-Temperature Crystallization of Hydrogenated Amorphous Silicon Induced by Nickel Silicide Formation
- Elastic Recoil Detection Analysis of Hydrogen Content in Hydrogenated Amorphous Silicon Fims
- Initial Stage of the Interfacial Reaction between Nickel and Hydrogenated Amorphous Silicon
- Correlation between Photoluminescence Intensity and Micro Structure in Amorphous Silicon Films Prepared by Reactive RF Sputtering
- Photoacoustic and Luminescence Spectra of CdS Fine Particles
- Non-Radiative Recombination Processes and Related Phenomena in Ge Doped As_2Se_3 Glasses
- Vibrational Spectra and Effective Charges in Some Spinels : CHALCOGENIDE SPINELS : OPTICAL, ELECTRICAL AND MAGNETIC PROPERTIES
- Infrared Reflectivity and Crystal Strusture of InS
- Passivation Properties of Plasma CVD AlN Films for GaAs
- One Phonon Raman Scattering of CdS Microcrystals Embedded in a Germanium Dioxide Glass Matrix
- Experimentally Deduced Adiabatic Potential of Ge Doped As_2se_3 Glasses
- Estimation of the Filling Factor of the High T_c Superconducting Phase in Y-Ba-Cu-O Mixed System
- Estimation of Non-Radiative Transition Rate in Tetracene-Doped Anthracene by Photoacoustic Spectroscopy : Chemistry (incl. physical process)
- Lattice Vibrations in Spinel Type Crystals Cd_xZn_Cr_2Se_4
- Infrared Optical Properties of Antiferromagnetic Semiconductor MnTe_2
- Lattice Vibrations of Magnetic Semiconductor Chalcogenide Spinels, Hg_xZn_Cr_2Se_4
- Far Infrared Absorption and Reflection on Some Semiconducting Spinels, CdCr_2Se_4 and CdCr_2S_4
- Lattice Vibrations on Semiconducting Spinel, HgCr_2Se_4
- Far Infrared and Raman Spectra in (As_2S_3)_(Sb_2S_3)_x Glasses
- Far Infrared Spectra in (As_2Se_3)_(Sb_2Se_3)_x Glasses
- Raman Scattering in Amorphous (As_2Se_3)_(Sb_2Se_3)_x System
- Transport Properties of Ge Doped As_2Se_3 Glasses
- Temperature Dependence of Lattice Frequencies in Magnetic Crystals MCr_2Se_4(M=Hg,Cd)
- Optical Absorption Spectra on Gold Doped Silicon Crystal in Near Infrared Energy Region
- Crystal Structure and Lattice Absorption of Partially-Inverse Spinel Compound MgIn_2S_4
- Optical and Electrical Properties of Inverse Spinel Compound MgIn_2S_4 : CHALCOGENIDE SPINELS : OPTICAL, ELECTRICAL AND MAGNETIC PROPERTIES
- Measurement of Shear Wave Velocities of Chalcogenide Glasses at Low Temperature by use of Sphere Resonance and Pulse Echo Methods : Physical Acoustics
- Infrared Reflection Spectra of High T_c Superconductor YBa_2Cu_3O_x Sintered at Various Temperatures
- Layer Correlation in a-As_2(Se_xS_)_3 Systems
- Second-Order Vibration Spectra of Amorphous As-Se Systems
- Photoconductive Properties of Amorphous As-Se System
- ZnO Thin Films Prepared by Ion-Assisted Deposition Method
- Studies on the Electronic Energy States of Germanium Microcrystal and the Chemical Shift due to Surface Oxidization by Means of Photoelectron Spectroscopy
- Annealing Effect on the Density of Upper Valence Band States of Evaporated Amorphous As-Se Film
- Change of Composition Ratio in Amorphous Arsenic Selenide Films Caused by Heat-Annealing and Photo-Irradiation
- The Infrared Absorption of GaP Single Crystals with Silicon and Oxygen Impurities
- Raman and Infrared Spectra of Amorphous Semiconductors (GeS_2)_(Sb_2S_3)_x Systems
- Properties of Germanium Single Crystals Heavily Doped with Tin
- Precipitation of Tin in Heavily Doped Germanium Single Crystals
- In-Situ Observation of Photodoping Process in a Chalcogenide Glass As_2S_3 by Ellipsometry
- The Change of the Charge Fluctuation with Ag Doping in Amorphous As_2S_3
- Far Infrared Spectrum of C_
- Photoluminescence from Excited Energy Bands in Au_ Nanoclusters
- Infrared Lattice Vibrations and Dielectric Dispersion in Antiferromagnetic Semiconductor MnSe_2
- Reflection Spectra of Calcite in Far-Infrared Region
- The Study of the Optical Properties of Conducting Tin Oxide Films and their Interpretation in Terms of a Tentative Band Scheme
- Estimation of the Filling Factor of the High $T_{\text{c}}$ Superconducting Phase in Y–Ba–Cu–O Mixed System
- Temperature Dependence of Photoacoustic and Photoluminescence Signals for CdSxSe1-x Microcrystals
- Effect of Size Confinement on the Electronic States of CdS Cluster in a Germanium Oxide Matrix
- Density of Upper Valence Band States of Amorphous Arsenic Selenide System Determined by Ultraviolet Photoelectric Emission Spectroscopy
- Diffusion of Metal Ions and Stimulated Currents into a-As2Se3 Thin Films
- Correlation between Natural Oxidation Process and Photoluminescence Properties of Hydrogenated Si Nanocrystallites Prepared by Pulsed Laser Ablation