Photoluminescence of TlInS_2 at Low Temperatures

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-12-30

著者

• ONARI Seinosuke

  Institute of Applied Physics, The University of Tsukuba

• ARAI Toshihiro

  Institute of Applied Physics, The University of Tsukuba

• Maruyama Yoshihiro

  Institute Of Applied Physics University Of Tsukauba

• AOYAGI Jun

  Institute of Applied Physics, University of Tsukauba

• ALLAKHEVERDIEV Kerim

  Institute of Physics Academy Science of the Azerbaijan SSR

• BAIRAMOVA E.

  Institute of Physics Academy Science of the Azerbaijan SSR

• Arai Toshihiro

  Institute For Optical Research Kyoiku University

• Onari Seinosuke

  Institute For Optical Research Tokyo University Of Education

• Onari Seinosuke

  Ins-sor Group Institute For Nuclear Study University Of Tokyo:college Of Education University Of Tok

• Seinosuke Onari

  Institute Of Applied Physics University Of Tsukuba

• Onari Seinosuke

  Institute Of Applied Physics Universtiy Of Tsukuba

• Onari Seinosuke

  Institute Of Applied Physics University Of Tsukauba

• Onari Seinosuke

  Department Of Pure Applied Sciences College Of General Education University Of Tokyo

• Onari Seinosuke

  Department Of Pure And Applied Science College Of General Education. University Of Tokyo

• Aoyagi J

  Institute Of Applied Physics University Of Tsukauba

• Arai Toshihiro

  Institute Of Applied Physics University Of Tsukauba

• Onari Seinosuke

  Department Of Pure And Applied Sciences College Of General Educaiton University Of Tokyo

• Arai Toshihiro

  Institte For Optical Research Kyoiku University

関連論文

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• Magnetoabsorption in Single-Crystal HgCr_2Se_4
• Lattice Dynamics and the Far Infrared Spectra of Pr_xLn_Ba_2Cu_3O_ (Ln=Lanthanide)
• Photoluminescence of TlInS_2 at Low Temperatures
• Sulfur-K X-Ray Spectra and Electronic Structure of a Semiconductor Ag_2S : Electrical Properties of Condensed Matter
• Correlation between X-Ray Reflectivity and Rutherford Backscattering Spectroscopy for Density Measurement of Thin Films
• Volume Expansion and Ag Doping Amounts in the Photodoping Process in Amorphous As_2S_3
• In-Situ Observation of Photodoping Process by Infrared Attenuated Total Reflection Method
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• Elastic Recoil Detection Analysis of Hydrogen Content in Hydrogenated Amorphous Silicon Fims
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• Far Infrared Spectra in (As_2Se_3)_(Sb_2Se_3)_x Glasses
• Raman Scattering in Amorphous (As_2Se_3)_(Sb_2Se_3)_x System
• Transport Properties of Ge Doped As_2Se_3 Glasses
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• Reflection Spectra of Calcite in Far-Infrared Region
• The Study of the Optical Properties of Conducting Tin Oxide Films and their Interpretation in Terms of a Tentative Band Scheme
• Estimation of the Filling Factor of the High $T_{\text{c}}$ Superconducting Phase in Y–Ba–Cu–O Mixed System
• Temperature Dependence of Photoacoustic and Photoluminescence Signals for CdSxSe1-x Microcrystals
• Effect of Size Confinement on the Electronic States of CdS Cluster in a Germanium Oxide Matrix
• Density of Upper Valence Band States of Amorphous Arsenic Selenide System Determined by Ultraviolet Photoelectric Emission Spectroscopy
• Diffusion of Metal Ions and Stimulated Currents into a-As2Se3 Thin Films

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