Raman Scattering in Amorphous (As_2Se_3)_<1-x>(Sb_2Se_3)_x System
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1980-09-05
著者
-
ONARI Seinosuke
Institute of Applied Physics, The University of Tsukuba
-
KATO Michio
Institute of Applied Physics, The University of Tsukuba
-
ARAI Toshihiro
Institute of Applied Physics, The University of Tsukuba
-
Kato Michio
Institute Of Applied Physics The University Of Tsukuba
-
Arai Toshihiro
Institute Of Applied Physics The University Of Tsukuba
-
Arai Toshihiro
Institute For Optical Research Kyoiku University
-
Onari Seinosuke
Institute For Optical Research Tokyo University Of Education
-
Arai Toshihiro
Institte For Optical Research Kyoiku University
関連論文
- Far Infrared Optical Properties of Amorphous As-Se System
- Raman Scattering in Amorphous As-Se System
- Pressure Effects on CdS Microcrystals Embedded in Germanate Glasses
- Raman Scattering of Amorphous Semiconductors Ge-S System under High Hydrostatic Pressure
- Magnetoabsorption in Single-Crystal HgCr_2Se_4
- Lattice Dynamics and the Far Infrared Spectra of Pr_xLn_Ba_2Cu_3O_ (Ln=Lanthanide)
- Photoluminescence of TlInS_2 at Low Temperatures
- Sulfur-K X-Ray Spectra and Electronic Structure of a Semiconductor Ag_2S : Electrical Properties of Condensed Matter
- Correlation between X-Ray Reflectivity and Rutherford Backscattering Spectroscopy for Density Measurement of Thin Films
- Volume Expansion and Ag Doping Amounts in the Photodoping Process in Amorphous As_2S_3
- In-Situ Observation of Photodoping Process by Infrared Attenuated Total Reflection Method
- Low-Temperature Crystallization of Hydrogenated Amorphous Silicon Induced by Nickel Silicide Formation
- Elastic Recoil Detection Analysis of Hydrogen Content in Hydrogenated Amorphous Silicon Fims
- Initial Stage of the Interfacial Reaction between Nickel and Hydrogenated Amorphous Silicon
- Photoacoustic and Luminescence Spectra of CdS Fine Particles
- Light Emitting Properties of Silicon Nanocrystallite Layer Synthesized by Pulsed Laser Ablation in Inert Background Gas
- Non-Radiative Recombination Processes and Related Phenomena in Ge Doped As_2Se_3 Glasses
- Vibrational Spectra and Effective Charges in Some Spinels : CHALCOGENIDE SPINELS : OPTICAL, ELECTRICAL AND MAGNETIC PROPERTIES
- Passivation Properties of Plasma CVD AlN Films for GaAs
- One Phonon Raman Scattering of CdS Microcrystals Embedded in a Germanium Dioxide Glass Matrix
- Experimentally Deduced Adiabatic Potential of Ge Doped As_2se_3 Glasses
- Estimation of the Filling Factor of the High T_c Superconducting Phase in Y-Ba-Cu-O Mixed System
- Estimation of Non-Radiative Transition Rate in Tetracene-Doped Anthracene by Photoacoustic Spectroscopy : Chemistry (incl. physical process)
- Lattice Vibrations in Spinel Type Crystals Cd_xZn_Cr_2Se_4
- Infrared Optical Properties of Antiferromagnetic Semiconductor MnTe_2
- Lattice Vibrations of Magnetic Semiconductor Chalcogenide Spinels, Hg_xZn_Cr_2Se_4
- Far Infrared Absorption and Reflection on Some Semiconducting Spinels, CdCr_2Se_4 and CdCr_2S_4
- Lattice Vibrations on Semiconducting Spinel, HgCr_2Se_4
- Far Infrared and Raman Spectra in (As_2S_3)_(Sb_2S_3)_x Glasses
- Far Infrared Spectra in (As_2Se_3)_(Sb_2Se_3)_x Glasses
- Raman Scattering in Amorphous (As_2Se_3)_(Sb_2Se_3)_x System
- Transport Properties of Ge Doped As_2Se_3 Glasses
- Temperature Dependence of Lattice Frequencies in Magnetic Crystals MCr_2Se_4(M=Hg,Cd)
- Optical Absorption Spectra on Gold Doped Silicon Crystal in Near Infrared Energy Region
- Crystal Structure and Lattice Absorption of Partially-Inverse Spinel Compound MgIn_2S_4
- Optical and Electrical Properties of Inverse Spinel Compound MgIn_2S_4 : CHALCOGENIDE SPINELS : OPTICAL, ELECTRICAL AND MAGNETIC PROPERTIES
- Measurement of Shear Wave Velocities of Chalcogenide Glasses at Low Temperature by use of Sphere Resonance and Pulse Echo Methods : Physical Acoustics
- Infrared Reflection Spectra of High T_c Superconductor YBa_2Cu_3O_x Sintered at Various Temperatures
- Layer Correlation in a-As_2(Se_xS_)_3 Systems
- Second-Order Vibration Spectra of Amorphous As-Se Systems
- Photoconductive Properties of Amorphous As-Se System
- ZnO Thin Films Prepared by Ion-Assisted Deposition Method
- Studies on the Electronic Energy States of Germanium Microcrystal and the Chemical Shift due to Surface Oxidization by Means of Photoelectron Spectroscopy
- Annealing Effect on the Density of Upper Valence Band States of Evaporated Amorphous As-Se Film
- Change of Composition Ratio in Amorphous Arsenic Selenide Films Caused by Heat-Annealing and Photo-Irradiation
- The Infrared Absorption of GaP Single Crystals with Silicon and Oxygen Impurities
- Raman and Infrared Spectra of Amorphous Semiconductors (GeS_2)_(Sb_2S_3)_x Systems
- Properties of Germanium Single Crystals Heavily Doped with Tin
- Precipitation of Tin in Heavily Doped Germanium Single Crystals
- The Change of the Charge Fluctuation with Ag Doping in Amorphous As_2S_3
- Far Infrared Spectrum of C_
- Infrared Lattice Vibrations and Dielectric Dispersion in Antiferromagnetic Semiconductor MnSe_2
- Reflection Spectra of Calcite in Far-Infrared Region
- The Study of the Optical Properties of Conducting Tin Oxide Films and their Interpretation in Terms of a Tentative Band Scheme
- Estimation of the Filling Factor of the High $T_{\text{c}}$ Superconducting Phase in Y–Ba–Cu–O Mixed System
- Temperature Dependence of Photoacoustic and Photoluminescence Signals for CdSxSe1-x Microcrystals
- Effect of Size Confinement on the Electronic States of CdS Cluster in a Germanium Oxide Matrix
- Density of Upper Valence Band States of Amorphous Arsenic Selenide System Determined by Ultraviolet Photoelectric Emission Spectroscopy
- Diffusion of Metal Ions and Stimulated Currents into a-As2Se3 Thin Films