Initial Stage of the Interfacial Reaction between Nickel and Hydrogenated Amorphous Silicon

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1990-04-20

著者

• ONARI Seinosuke

  Institute of Applied Physics, The University of Tsukuba

• ARAI Toshihiro

  Institute of Applied Physics, The University of Tsukuba

• Kudo Hiroshi

  Institute Of Applied Physics University Of Tsukuba

• Arai Takeshi

  The Faculty Of Engineering Saitama University

• 新井 豊子

  金大院自然

• Arai Toshihiro

  Institute For Optical Research Kyoiku University

• KAWAZU Yoshiyuki

  Oki Ekectric Industry Co., Ltd.

• KAWAZU Yunosuke

  Institute of Applied Physics, University of Tsukuba

• Kawazu Y

  Nihon Univ. Koriyama Jpn

• Onari S

  Institute Of Applied Physics University Of Tsukuba

• Onari Seinosuke

  Institute For Optical Research Tokyo University Of Education

• Arai Toshihiro

  Institte For Optical Research Kyoiku University

• Kanda H

  Univ. Tsukuba Ibaraki

関連論文

• 21aPS-7 NC-AFM探針-試料間に誘起する変位電流によるジュール熱の第一原理計算(領域9ポスターセッション,領域9(表面・界面,結晶成長))
• Far Infrared Optical Properties of Amorphous As-Se System
• Raman Scattering in Amorphous As-Se System
• Measurement of Diffusion Coefficient of CF_2 Radical in DC Pulsed CF_4/H_2 Discharge Plasma
• Measurements of Diffusion Coefficient of CF_2 Radical in DC Pulsed CF_4/O_2 Discharge Plasma ( Plasma Processing)
• Measurement of a Cross Section for the ^Al (p,3pn)^Na Reaction at 12 GeV
• Pressure Effects on CdS Microcrystals Embedded in Germanate Glasses
• Raman Scattering of Amorphous Semiconductors Ge-S System under High Hydrostatic Pressure
• Cooling and Excitation Tests of a Thin 1 mφ×1 m Superconducting Solenoid Magnet
• Measurement of Propagation Velocities of the Normal Zone in a 1 mφ×1 m Superconducting Solenoid Magnet
• Magnetoabsorption in Single-Crystal HgCr_2Se_4
• Lattice Dynamics and the Far Infrared Spectra of Pr_xLn_Ba_2Cu_3O_ (Ln=Lanthanide)
• 27pPSA-2 水素終端Si(100)上に形成したAuナノ粒子のSTS II(領域9ポスターセッション)(領域9)
• 28pPSB-57 水素終端 Si(100) 上に形成した Au ナノ粒子の STS
• Y-Ba-Cu Oxide Films Formed with Pulsed-Laser Induced Fragments : Electrical Properties of Condensed Matter
• Atomic Migration of Metals in the Interfaces of Au-Si and Ni-Si for Crystalline and Amorphous Si Observed by 40 MeV-O^ Ion Backscattering
• Energy Spectra of Electrons Induced by MeV Atom Clusters
• Effects of Fluorocarbon Films on CF Radical in CF_4/H_2 Plasma
• Ion-Induced Anger Electrons Emitted from MgO and GaP under Shadowing Conditions
• Anger Electron Emission under Jon-Beam Shadowing Conditions
• 走査型プローブ顕微鏡にみる電圧印加のナノ力学的相互作用
• Shadowing Pattern Imaging with High-Energy Secondary Electrons Induced by Fast Ions
• Photoluminescence of TlInS_2 at Low Temperatures
• Analysis of Misoriented Crystal Structure by Ion Channeling Observed Using Ion-Induced Secondary Electrons
• Measurements of Diffusion Coefficient of CF_2 Radical in DC Pulsed CF_4 Discharge Plasma
• Sulfur-K X-Ray Spectra and Electronic Structure of a Semiconductor Ag_2S : Electrical Properties of Condensed Matter
• Correlation between X-Ray Reflectivity and Rutherford Backscattering Spectroscopy for Density Measurement of Thin Films
• Volume Expansion and Ag Doping Amounts in the Photodoping Process in Amorphous As_2S_3
• In-Situ Observation of Photodoping Process by Infrared Attenuated Total Reflection Method
• 30aTE-13 SPMを利用したSi-Si接合のコンダクタンス測定(30aTE 領域9,領域7合同 ナノチューブ・ナノワイヤ,領域9(表面・界面,結晶成長))
• 30aRD-10 電圧印加非接触原子間力顕微鏡法によるSi(111)7×7表面の電子状態解析(30aRD 表面界面電子物性,領域9(表面・界面,結晶成長))
• 23aXA-7 電圧印加非接触原子間力分光法による探針-試料間電子状態解析(23aXA 表面界面電子物性,領域9(表面・界面,結晶成長))
• 30pYB-9 非接触原子間力分光法による極近接状態の相互作用力とコンダクタンスの測定(30pYB 表面界面電子物性,領域9(表面・界面,結晶成長))
• 電圧印加非接触原子間力顕微鏡法を利用した探針-試料間の相互作用力分光法
• 19pYP-4 電圧印加非接触原子間力顕微鏡/分光法による探針-試料間相互作用の解析(領域9シンポジウム : 原子間力顕微鏡法の新展開,領域9(表面・界面,結晶成長))
• 25pWB-10 非接触原子間力分光法によるSi(111)7×7表面の電子状態の観察(表面・界面電子物性,領域9(表面・界面, 結晶成長))
• 電圧印加非接触原子間力分光法による量子力学的共鳴相互作用の測定
• 23aYD-6 探針と印加電圧による非接触原子間力顕微鏡像の変化
• SPMを利用したナノ力学計測とデバイス創製の展望 (日本顕微鏡学会第48回シンポジウム 材料科学と生命科学のクロストーク--顕微解析の最前線) -- (非生物系セッション4 SPMとナノ力学的デバイス)
• 28aYQ-9 超高真空非接触原子間力顕微鏡を用いたトンネル電流と散逸の測定
• 装置・手法としての可能性と限界
• 24pZN-5 非接触原子間力顕微鏡の印加電圧依存性と画像化機構の考察
• 27aW-8 非接触原子間力顕微鏡によるSi(111)表面像の印加電圧効果
• Scanning Auger Electron Microscopy Evaluation and Composition Control of Cantilevers for Ultrahigh Vacuum Atomic Force Microscopy ( Scanning Tunneling Microscopy)
• Planar Shadowing of Fast Ion Beams in Si and Ge Crystals Bombarded with 5 keV Ar^+
• High-Sensitivity Channeling Analysis of Lattice Disorder Near Surfaces Using Secondary Electrons Induced by Fast Ions
• Characterization of Epitaxially Grown CeO_2(110) Layers on Si by Means of Shadowing Pattern Imaging with Fast Ion Beams
• Surface Layer Analysis of Sputter-Etched Si Using Secondary Electrons Induced by Fast Ions
• Low-Temperature Crystallization of Hydrogenated Amorphous Silicon Induced by Nickel Silicide Formation
• Determination of the Crystallographic Polarity of Zincblende Structure by Using Ion-Induced Secondary Electrons
• Elastic Recoil Detection Analysis of Hydrogen Content in Hydrogenated Amorphous Silicon Fims
• Initial Stage of the Interfacial Reaction between Nickel and Hydrogenated Amorphous Silicon
• Thermal Stability of Hg_Cd_xTe Crystals Covered with the Anodic Oxide Films
• NC-AFM像の印加電圧依存性と画像化技術
• Photoacoustic and Luminescence Spectra of CdS Fine Particles
• Light Emitting Properties of Silicon Nanocrystallite Layer Synthesized by Pulsed Laser Ablation in Inert Background Gas
• Non-Radiative Recombination Processes and Related Phenomena in Ge Doped As_2Se_3 Glasses
• Vibrational Spectra and Effective Charges in Some Spinels : CHALCOGENIDE SPINELS : OPTICAL, ELECTRICAL AND MAGNETIC PROPERTIES
• Passivation Properties of Plasma CVD AlN Films for GaAs
• One Phonon Raman Scattering of CdS Microcrystals Embedded in a Germanium Dioxide Glass Matrix
• Experimentally Deduced Adiabatic Potential of Ge Doped As_2se_3 Glasses
• Estimation of the Filling Factor of the High T_c Superconducting Phase in Y-Ba-Cu-O Mixed System
• Estimation of Non-Radiative Transition Rate in Tetracene-Doped Anthracene by Photoacoustic Spectroscopy : Chemistry (incl. physical process)
• Lattice Vibrations in Spinel Type Crystals Cd_xZn_Cr_2Se_4
• Infrared Optical Properties of Antiferromagnetic Semiconductor MnTe_2
• Lattice Vibrations of Magnetic Semiconductor Chalcogenide Spinels, Hg_xZn_Cr_2Se_4
• Far Infrared Absorption and Reflection on Some Semiconducting Spinels, CdCr_2Se_4 and CdCr_2S_4
• Lattice Vibrations on Semiconducting Spinel, HgCr_2Se_4
• Far Infrared and Raman Spectra in (As_2S_3)_(Sb_2S_3)_x Glasses
• Far Infrared Spectra in (As_2Se_3)_(Sb_2Se_3)_x Glasses
• Raman Scattering in Amorphous (As_2Se_3)_(Sb_2Se_3)_x System
• Transport Properties of Ge Doped As_2Se_3 Glasses
• Temperature Dependence of Lattice Frequencies in Magnetic Crystals MCr_2Se_4(M=Hg,Cd)
• Optical Absorption Spectra on Gold Doped Silicon Crystal in Near Infrared Energy Region
• 26pTG-6 Si(001)表面におけるDAT分子の吸着構造と電子状態(26pTG 表面界面電子物性(シミュレーション),領域9(表面・界面,結晶成長))
• Crystal Structure and Lattice Absorption of Partially-Inverse Spinel Compound MgIn_2S_4
• Optical and Electrical Properties of Inverse Spinel Compound MgIn_2S_4 : CHALCOGENIDE SPINELS : OPTICAL, ELECTRICAL AND MAGNETIC PROPERTIES
• Measurement of Shear Wave Velocities of Chalcogenide Glasses at Low Temperature by use of Sphere Resonance and Pulse Echo Methods : Physical Acoustics
• Infrared Reflection Spectra of High T_c Superconductor YBa_2Cu_3O_x Sintered at Various Temperatures
• Layer Correlation in a-As_2(Se_xS_)_3 Systems
• Second-Order Vibration Spectra of Amorphous As-Se Systems
• Photoconductive Properties of Amorphous As-Se System
• ZnO Thin Films Prepared by Ion-Assisted Deposition Method
• Studies on the Electronic Energy States of Germanium Microcrystal and the Chemical Shift due to Surface Oxidization by Means of Photoelectron Spectroscopy
• Annealing Effect on the Density of Upper Valence Band States of Evaporated Amorphous As-Se Film
• Change of Composition Ratio in Amorphous Arsenic Selenide Films Caused by Heat-Annealing and Photo-Irradiation
• The Infrared Absorption of GaP Single Crystals with Silicon and Oxygen Impurities
• Raman and Infrared Spectra of Amorphous Semiconductors (GeS_2)_(Sb_2S_3)_x Systems
• Properties of Germanium Single Crystals Heavily Doped with Tin
• Precipitation of Tin in Heavily Doped Germanium Single Crystals
• Fast Deposition of Amorphous and Microcrystalline Silicon Films from SiH2Cl2– SiH4– H2 by Plasma-Enhanced Chemical Vapor Deposition
• Initial Stage of Microcrystalline Silicon Growth by Plasma-Enhanced Chemical Vapor Deposition
• The Change of the Charge Fluctuation with Ag Doping in Amorphous As_2S_3
• 23pHA-9 Si(001)表面におけるDAT分子の電子状態(23pHA 表面界面電子物性(シミュレーション),領域9(表面・界面,結晶成長))
• 24pCC-3 Si(001)に吸着したDATのSTM像探針バイアス依存性(24pCC 表面界面構造,領域9(表面・界面,結晶成長))
• Suppression Mechanism of Electron Emission under Fast Cluster Impact on Solids
• 27pXZA-6 非接触AFMによる分子吸着Si(111)7×7表面の電子状態変化の検討(27pXZA 表面界面電子物性・有機分子,領域9(表面・界面,結晶成長))
• Energy Spectra of Electrons Induced by MeV Atom Clusters
• 18pFE-15 nc-AFMによる相互作用力と表面電子状態の相関の検討(18pFE 表面界面電子物性・トポロジカル表面,領域9(表面・界面,結晶成長))
• 24aYF-13 ダンピング同時測定によるSi(111)面上のGe薄膜のnc-AFM観察(24aYF 表面界面電子物性,領域9(表面・界面,結晶成長分野))

もっと見る 閉じる

スポンサーリンク