Energy Spectra of Electrons Induced by MeV Atom Clusters
スポンサーリンク
概要
- 論文の詳細を見る
The first observation of the energy distribution of electrons emitted from solids bombarded by MeV atom clusters is reported. In the backward direction, using graphite and Si bombarded by C$_{n}^{+}$ and Al$_{n}^{+}$ ($n \leq 8$), an appreciable suppression of electron emission has been observed at electron energies lower than ${\sim}10$ eV. Electron yield per atom decreases with increasing $n$, and becomes less than 50% at $n \ge 3$, relative to the case of $n=1$. The experimental results cannot be explained in terms of projectile stopping cross sections nor by the clearing-the-way effect. It is probable that the suppressed electron emission is a result of the suppression of the transport or surface transmission of the produced low-energy electrons, rather than of the suppression of ionization.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2006-06-25
著者
-
Sasa Kimikazu
Uttac University Of Tsukuba
-
Kudo Hiroshi
Institute Of Applied Physics University Of Tsukuba
-
NARUMI Kazumasa
Japan Atomic Energy Agency
-
SAITOH Yuichi
Japan Atomic Energy Research Institute
-
YAMAMOTO Shunya
Japan Atomic Energy Research Institute
-
KANEKO Toshiaki
Department of Applied Physics, Okayama University of Science
-
Uchiyama Rumi
Institute Of Applied Physics University Of Tsukuba
-
Iwazaki Wataru
Institute Of Applied Physics University Of Tsukuba
-
Shima Kunihiro
Uttac University Of Tsukuba
-
Naramoto Hiroshi
Japan Atomic Energy Agency Takasaki Jpn
-
Ishii Satoshi
Uttac University Of Tsukuba
-
Tomita Shigeo
Institute Of Applied Physics University Of Tsukuba
-
Yamamoto Shunya
Japan Atomic Energy Research Institute, Takasaki, Gunma 370-1292, Japan
-
Tomita Shigeo
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
-
Shima Kunihiro
UTTAC, University of Tsukuba, Tsukuba, Ibaraki 305-8577, Japan
-
Iwazaki Wataru
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
-
Narumi Kazumasa
Japan Atomic Energy Research Institute, Takasaki, Gunma 370-1292, Japan
-
Sasa Kimikazu
UTTAC, University of Tsukuba, Tsukuba, Ibaraki 305-8577, Japan
-
Naramoto Hiroshi
Japan Atomic Energy Research Institute, Takasaki, Gunma 370-1292, Japan
-
Ishii Satoshi
UTTAC, University of Tsukuba, Tsukuba, Ibaraki 305-8577, Japan
関連論文
- Measurement of a Cross Section for the ^Al (p,3pn)^Na Reaction at 12 GeV
- Cooling and Excitation Tests of a Thin 1 mφ×1 m Superconducting Solenoid Magnet
- Measurement of Propagation Velocities of the Normal Zone in a 1 mφ×1 m Superconducting Solenoid Magnet
- Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application
- Y-Ba-Cu Oxide Films Formed with Pulsed-Laser Induced Fragments : Electrical Properties of Condensed Matter
- Atomic Migration of Metals in the Interfaces of Au-Si and Ni-Si for Crystalline and Amorphous Si Observed by 40 MeV-O^ Ion Backscattering
- Energy Spectra of Electrons Induced by MeV Atom Clusters
- Ion-Induced Anger Electrons Emitted from MgO and GaP under Shadowing Conditions
- Anger Electron Emission under Jon-Beam Shadowing Conditions
- Organic Contaminant Detection of Silicon Wafers Using Negative Secondary Ions Induced by Cluster Ion Impacts
- Shadowing Pattern Imaging with High-Energy Secondary Electrons Induced by Fast Ions
- Analysis of Misoriented Crystal Structure by Ion Channeling Observed Using Ion-Induced Secondary Electrons
- Correlation between X-Ray Reflectivity and Rutherford Backscattering Spectroscopy for Density Measurement of Thin Films
- Volume Expansion and Ag Doping Amounts in the Photodoping Process in Amorphous As_2S_3
- Planar Shadowing of Fast Ion Beams in Si and Ge Crystals Bombarded with 5 keV Ar^+
- High-Sensitivity Channeling Analysis of Lattice Disorder Near Surfaces Using Secondary Electrons Induced by Fast Ions
- Characterization of Epitaxially Grown CeO_2(110) Layers on Si by Means of Shadowing Pattern Imaging with Fast Ion Beams
- Surface Layer Analysis of Sputter-Etched Si Using Secondary Electrons Induced by Fast Ions
- Low-Temperature Crystallization of Hydrogenated Amorphous Silicon Induced by Nickel Silicide Formation
- Determination of the Crystallographic Polarity of Zincblende Structure by Using Ion-Induced Secondary Electrons
- Elastic Recoil Detection Analysis of Hydrogen Content in Hydrogenated Amorphous Silicon Fims
- Initial Stage of the Interfacial Reaction between Nickel and Hydrogenated Amorphous Silicon
- Thermal Stability of Hg_Cd_xTe Crystals Covered with the Anodic Oxide Films
- Sorption Mechanism of Europium by Apatite Using Rutherford Backscattering Spectroscopy and Resonant Nuclear Reaction Analysis
- Polymeric Co-C_ Compound Phase Evolved in Atomistically Mixed Thin Films
- A17 SYNTHESIS OF NANO COMPOSIT ZEOLITE WITH SESQUIOXIDE IN RELATION TO ENVIRONMENTAL POLLUTION REMEDIATION
- Hadron Mass Corrections and Patron Transverse Momentum in Hadronic μ-Pair Production
- Nucleon Decay in Supergrand Unification
- Isochronal Annealing Effects on the Yield Stress of Electron-Irradiated Copper Single Crystals
- Electron Dose Dependences of Irradiation Hardening and Activation Volume in Copper Single Crystals
- Surface-sensitive Chemical Analysis of Organic Insulating Thin Films Using Negative Secondary Ions Induced by Medium Energy C60 Impacts
- Surface-sensitive Chemical Analysis of Organic Insulating Thin Films Using Negative Secondary Ions Induced by Medium Energy C_ Impacts
- Suppression Mechanism of Electron Emission under Fast Cluster Impact on Solids
- Strain Profile of Plastic Zone in Dislocation-Free Niobium Single Crystal Determined by X-Ray Topography
- Energy Spectra of Electrons Induced by MeV Atom Clusters