Apparent Recovery Effect of Hydrogenated Pd-on-GaAs (n-Type) Schottky Interface by Forward Current at Low Temperature
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概要
- 論文の詳細を見る
The hydrogen-induced charge in the hydrogenated Pd-on-GaAs (n-type) Schottky interface was observed to diminish upon application of forward current at low temperature. This apparent recovery disappears when the sample is heated towards room temperature, that is, the hydrogen-induced charge is reobserved without additional hydrogenation. Thus, it is conceivable that this apparent recovery effect is not due to the removal of the hydrogen, but to variation of the charge state of the hydrogen due to the trapping of the electrons.
- 社団法人応用物理学会の論文
- 1993-07-01
著者
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Nannichi Yasuo
Institute of Materials Science, University of Tsukuba
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Nannichi Yasuo
Institute Of Materials Science And Center For Tara Tsukuba Advanced Research Alliance University Of
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Nie Heng-yong
Electrotechnical Laboratory
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