Room Temperature 1.6 μm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi_2 Active Region
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-10-15
著者
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末益 崇
筑波大学大学院数理物質科学研究科電子・物理工学専攻
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SUEMASU Takashi
Institute of Applied Physics, University of Tsukuba
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HASEGAWA Fumio
Institute of Applied Physics, University of Tsukuba
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NEGISHI Yoichiro
Institute of Applied Physics, University of Tsukuba
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Negishi Yoichiro
Institute Of Applied Physics University Of Tsukuba
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Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
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Suemasu Takashi
Institute Of Applied Physics University Of Tsukuba
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TAKAKURA Ken'ichiro
Institute of Applied Physics, University of Tsukuba
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SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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