Epitaxial Growth of GaAs at One to Two Monolayers per Cycle by Alternate Supply of GaCl_3 and AsH_3
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概要
- 論文の詳細を見る
Atomic layer growth of GaAs using GaCl_3 and AsH_3 was carefully investigated. Precise measurements revealed that the growth rate depended on the growth temperature and increased from 1 monolayer/cycle at 300℃ to nearly 2 monolayers/cycle at 450℃ for alternating supply of GaCl_3 and AsH_3, contrary to what we had previously reported. When the growth temperature was less than 300℃, GaAs deposited both on a GaAs substrate and on the SiO_2 mask and the growth rate was about 0.7 monolayers/cycle. Raman spectra of the grown layers indicated that GaAs grown at above 300℃ was a single crystal but that GaAs deposited below 300℃ was polycrystalline.
- 社団法人応用物理学会の論文
- 1992-06-15
著者
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KOBAYASHI RYUJI
Institute of Health Sciences, Faculty of Medicine, Hiroshima University
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Kobayashi Ryuji
Institute Of Materials Science University Of Tsukuba
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HASEGAWA Fumio
Tohoku University of Art and Design
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Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
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Narahara Satoru
Institute Of Materials Science University Of Tsukuba
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ISHIKAWA Katsumi
Institute of Materials Science, University of Tsukuba
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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