Kobayashi Ryuji | Institute Of Materials Science University Of Tsukuba
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概要
関連著者
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KOBAYASHI RYUJI
Institute of Health Sciences, Faculty of Medicine, Hiroshima University
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Kobayashi Ryuji
Institute Of Materials Science University Of Tsukuba
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HASEGAWA Fumio
Tohoku University of Art and Design
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Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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HASEGAWA Fumio
Institute of Applied Physics, University of Tsukuba
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Narahara Satoru
Institute Of Materials Science University Of Tsukuba
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ISHIKAWA Katsumi
Institute of Materials Science, University of Tsukuba
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JIN Yoshito
NTT LSI Laboratories
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Jin Y
Ntt Microsystem Integration Laboratories
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Yamaguchi H
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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Yamaguchi H
Ntt Basic Research Laboratories
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Fujii Kunihiro
Institute of Materials Science, University of Tsukuba
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JIN Yoshito
Institute of Materials Science, University of Tsukuba
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YAMAGUCHI Hiromu
Institute of Materials Science, University of Tsukuba
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Yamaguchi Hiromu
Institute Of Materials Science Universityof Tsukuba
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FUJII Kunihiro
Institute of Material Science, University of Tsukuba
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Nannichi Yasuo
Institute of Materials Science, University of Tsukuba
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Nannichi Yasuo
Institute Of Materials Science And Center For Tara Tsukuba Advanced Research Alliance University Of
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Takayama Koji
Institute Of Materials Science University Of Tsukuba
著作論文
- Atomic Layer Epitaxy of GaAs Using GaCl_3 and AsH_3
- Vapor Phase Epitaxy of AlGaAs by Direct Reacion between AlCl_2, GaCl_3 and AsH_3/H_2
- Chloride VPE of Al_xGa_As by the Hydrogen Reduction Method Using a Metal Al Source : Semiconductors and Semiconductor Devices
- In Situ Observation of Atomic Layer Epitaxy of GaAs Using GaCl_3 by Surface Photo-Absorption Method
- Role of Hydrogen in Atomic Layer Epitaxy of GaAs Using GaCl_3
- Epitaxial Growth of GaAs at One to Two Monolayers per Cycle by Alternate Supply of GaCl_3 and AsH_3
- Etching of GaAs by Atomic Hydrogen Generated by a Tungsten Filament