Thick and Smooth Hexagonal GaN Growth on GaAs (111) Substrates at 1000℃ with Halide Vapor Phase Epitaxy

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概要

• 論文の詳細を見る
• 1999-07-01

著者

• 末益 崇

  筑波大学大学院数理物質科学研究科電子・物理工学専攻

• Minami Masato

  The Authors Are With The Institute Of Applied Physics University Of Tsukuba

• Minami M

  Department Of Microbiology Kyoto Prefectural University Of Medicine

• Minami Masato

  Wildlife Research Center

• SUEMASU Takashi

  Institute of Applied Physics, University of Tsukuba

• HASEGAWA Fumio

  Institute of Applied Physics, University of Tsukuba

• HASEGAWA Fumio

  Tohoku University of Art and Design

• SUNABA Kenji

  Institute of Materials Science, University of Tsukuba

• MINAMI Masato

  Institute of Materials Science, University of Tsukuba

• Hasegawa Fumio

  Institute Of Applied Physics University Of Tsukuba

• Suemasu Takashi

  Institute Of Applied Physics University Of Tsukuba

• Sunaba Kenji

  Institute Of Applied Physics University Of Tsukuba

• SUEMASU Takashi

  Institlite of Materials Science, University of Tsukuba

• HASEGAWA Fumio

  Institlite of Materials Science, University of Tsukuba

• SUNABA Kenji

  Institlite of Materials Science, University of Tsukuba

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