Vapor Phase Epitaxy of GaAs by Direct Reduction of GaCl_3 with AsH_3/H_2 : Semiconductors and Semiconductor Devices
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概要
- 論文の詳細を見る
GaAs was epitaxially grown at 500-600℃ by direct reduction GaCl_3 with AsH_3/H_2. The GaCl_3 in a stainless steel evaporator was maintained at about 85℃, and supplied by He carrier gas. The AsH_3 diluted with H_2 was supplied in a separate line directly to the deposition zone. The growth rate was about 5-10μm/hr for GaCl_3 of 5.5×10^<-5> mol/min and V/III ratio of 5. The carrier concentrations of the grown layers were 10^<15> to 10^<16> cm^<-3>, and the maximum mobility obtained was 10000 cm^2/V・s at 77 K. These results indicate the possibility of a new growth method of III-V compounds.
- 社団法人応用物理学会の論文
- 1988-08-20
著者
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Katayama Koji
Institute Of Materials Science Universityof Tsukuba
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HASEGAWA Fumio
Institute of Applied Physics, University of Tsukuba
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Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
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Hasegawa Fumio
Institute Of Materials Science Universityof Tsukuba
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YAMAGUCHI Hiromu
Institute of Materials Science, University of Tsukuba
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Yamaguchi Hiromu
Institute Of Materials Science Universityof Tsukuba
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