Molecular Beam Epitaxy of Highly [100]-Oriented $\beta$-FeSi2 Films on Lattice-Matched Strained-Si(001) Surface Using Si0.7Ge0.3 Layers
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概要
- 論文の詳細を見る
We have grown highly [100]-oriented $\beta$-FeSi2 continuous films on lattice-matched Si(001) surfaces using Si0.7Ge0.3 layers by molecular beam epitaxy (MBE). The $\beta$-FeSi2 films grown on the lattice-matched Si(001) did not aggregate even when it was grown at temperatures above 600°C. The omega-scan full width at half maximum of the $\beta$-FeSi2(800) peak was smaller than that of the film grown on Si(001) over the entire growth temperature ranging from 500 to 720°C. X-ray diffraction pole figure measurements revealed that a [100]-oriented $\beta$-FeSi2 template layer is necessary to obtain [100]-oriented $\beta$-FeSi2 films by MBE even on the lattice-matched Si(001).
- Japan Society of Applied Physicsの論文
- 2004-07-15
著者
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Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
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Suemasu Takashi
Central Research Institute Mitsubishi Materials Corporation
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Saito Tatsuma
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Jap
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Yamaguchi Kenji
Central Research Institute, Mitsubishi Materials Corporation, Ohmiya-ku, Saitama, Saitama 330-8508,
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Mizushima Kazuki
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Jap
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Saito Tatsuma
Institute Of Applied Physics University Of Tsukuba
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Mizushima Kazuki
Institute Of Applied Physics University Of Tsukuba
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Yamaguchi Kenji
Central Research Institute Mitsubishi Materials Corporation
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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