Yamaguchi Kenji | Central Research Institute Mitsubishi Materials Corporation
スポンサーリンク
概要
関連著者
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Yamaguchi Kenji
Central Research Institute Mitsubishi Materials Corporation
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Yano Hiroshi
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
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Fuyuki Takashi
Graduate School Of Material Science Nara Institute Of Science And Technology
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Suemasu Takashi
Central Research Institute Mitsubishi Materials Corporation
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Saito Tatsuma
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Jap
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Yamaguchi Kenji
Central Research Institute, Mitsubishi Materials Corporation, Ohmiya-ku, Saitama, Saitama 330-8508,
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Mizushima Kazuki
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Jap
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Saito Tatsuma
Institute Of Applied Physics University Of Tsukuba
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Mizushima Kazuki
Institute Of Applied Physics University Of Tsukuba
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Uraoka Yukiharu
Graduate School of Material Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan
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Hatayama Tomoaki
Graduate School of Engineering, Kyoto Univercity
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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Yamaguchi Kenji
Central Research Institute, Mitsubishi Materials Corporation, 1-297 Kitabukuro-cho, Omiya-ku, Saitama 330-8508, Japan
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Nitani Satoshi
Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
著作論文
- Molecular Beam Epitaxy of Highly [100]-Oriented $\beta$-FeSi2 Films on Lattice-Matched Strained-Si(001) Surface Using Si0.7Ge0.3 Layers
- Nondestructive Analysis of Crystal Defects in 4H-SiC Epilayer by Devised Electron-Beam-Induced Current Method