Yano Hiroshi | Graduate School Of Materials Science Nara Institute Of Science And Technology

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概要

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著作論文

Investigation of Near-Interface Traps Generated by NO Direct Oxidation in C-face 4H-SiC Metal-Oxide-Semiconductor Structures
Effect of High Magnetic Field on Copper Deposition from an Aqueous Solution
Electron Injection into Si Nanodot Fabricated by Side-Wall Plasma Enhanced Chemical Vapor Deposition
Gate Length Dependence of Hot Carrier Reliability in Low-Temperature Polycrystatline-Silicon P-Channel Thin Film Transistors
Low Temperature Nitridation of Si Oxide Utilizing Activated Nitrogen(Semiconductors)
Comprehensive Study on Reliability of Low-Temperature Poly-Si Thin-Film Transistors under Dynamic Complimentary Metal-Oxide Semiconductor Operations
Hot Carrier Effect in Low-Temperature poly-Si p-ch Thin-Film Transistors under Dynamic Stress : Semiconductors
NH_3 Plasma Pretreatment of 4H-SiC(0001) Surface for Reduction of Interface States in Metal-Oxide-Semiconductor Devices
Thermal Etching of 4H-SiC(0001) Si Faces in the Mixed Gas of Chlorine and Oxygen
Low Temperature Nitridation of Si Oxide Utilizing Activated Oxygen and Nitrogen
Analysis of Photoelectrochemical Processes in $\alpha$-SiC Substrates with Atomically Flat Surfaces
Evaluation of Crystallinity in 4H–SiC{0001} Epilayers Thermally Etched by Chlorine and Oxygen System
Origin of Anisotropic Electrical Properties of 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistors on Off-Axis Substrates
Shape Control of Trenched 4H-SiC C-Face by Thermal Chlorine Etching
Floating Nanodot Gate Memory Devices Based on Biomineralized Inorganic Nanodot Array as a Storage Node
Degradation in Low-Temperature Poly-Si Thin Film Transistors Depending on Grain Boundaries
Fabrication of Anodic Oxidation Films on 4H–SiC at Room Temperature Using HNO3-Based Electrolytes
Improvement of SiO2/SiC Interface Properties by Nitrogen Radical Irradiation
Role of Hydrogen in Dry Etching of Silicon Carbide Using Inductively and Capacitively Coupled Plasma
Electron Injection into Si Nanodot Fabricated by Side-Wall Plasma Enhanced Chemical Vapor Deposition
Low Temperature Nitridation of Si Oxide Utilizing Activated Oxygen and Nitrogen
Nondestructive Analysis of Crystal Defects in 4H-SiC Epilayer by Devised Electron-Beam-Induced Current Method

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