HATAYAMA Tomoaki | Graduate School of Materials Science, Nara Institute of Science and Technology

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概要

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著作論文

Investigation of Near-Interface Traps Generated by NO Direct Oxidation in C-face 4H-SiC Metal-Oxide-Semiconductor Structures
Evaluation of Crystallinity in 4H-SiC{0001} Epilayers Thermally Etched by Chlorine and Oxygen System
Floating Nanodot Gate Memory Devices Based on Biomineralized Inorganic Nanodot Array as a Storage Node
Analysis of Photoelectrochemical Processes in α-SiC Substrates with Atomically Flat Surfaces
Electron Injection into Si Nanodot Fabricated by Side-Wall Plasma Enhanced Chemical Vapor Deposition
Fabrication of Anodic Oxidation Films on 4H-SiC at Room Temperature Using HNO_3-Based Electrolytes
Role of Hydrogen in Dry Etching of Silicon Carbide Using Inductively and Capacitively Coupled Plasma
High pressure water vapor annealing for improving HfSiO dielectrics properties
Degradation in Low-Temperature Poly-Si Thin Film Transistors Depending on Grain Boundaries
Gate Length Dependence of Hot Carrier Reliability in Low-Temperature Polycrystatline-Silicon P-Channel Thin Film Transistors
Low Temperature Nitridation of Si Oxide Utilizing Activated Nitrogen(Semiconductors)
Comprehensive Study on Reliability of Low-Temperature Poly-Si Thin-Film Transistors under Dynamic Complimentary Metal-Oxide Semiconductor Operations
Hot Carrier Effect in Low-Temperature poly-Si p-ch Thin-Film Transistors under Dynamic Stress : Semiconductors
Comprehensive Study on Reliability of Low-Temperature Poly-Si TFTs under Dynamic CMOS Operations
Comparison between the photoluminescence Properties of LaPO_4 : Tb, Ce Phosphor under 254nm Excitation and those under 365nm Excitation
NH_3 Plasma Pretreatment of 4H-SiC(0001) Surface for Reduction of Interface States in Metal-Oxide-Semiconductor Devices
Analysis of Device Performance by Quasi Three-Dimensional Simulation for Thin Film Polycrystalline Silicon Solar Cells with Columnar Structure : Semiconductors
Reliability of High-Frequency Operation of Low-Temperature Polysilicon Thin Film Transistors under Dynamic Stress
Electrical Properties and Thermal Stability of Cu/6H-SiC Junctions : Electrical Properties of Condensed Matter

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