Analysis of Photoelectrochemical Processes in α-SiC Substrates with Atomically Flat Surfaces
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-12-30
著者
-
畑山 智亮
Graduate School Of Materials Science Nara Institute Of Science And Technology
-
YANO Hiroshi
Graduate School of Materials Science, Nara Institute of Science and Technology
-
HATAYAMA Tomoaki
Graduate School of Materials Science, Nara Institute of Science and Technology
-
URAOKA Yukiharu
Graduate School of Materials Science, Nara Institute of Science and Technology
-
FUYUKI Takashi
Graduate School of Materials Science, Nara Institute of Science and Technology
-
Yano H
Graduate School Of Materials Science Nara Institute Of Science And Technology
-
MIKAMI Hidenori
Graduate School of Materials Science, Nara Institute of Science and Technology
関連論文
- 擬三次元シミュレーションによる多結晶シリコン薄膜太陽電池の動作解析(半導体Si及び関連電子材料評価)
- 単結晶シリコン薄膜太陽電池のシミュレーショシによる最適化設計(半導体Si及び関連電子材料評価)
- ダイナミックストレスに対するp型低温ポリシリコン薄膜トランジスタの信頼性評価
- NO直接酸化法により作製したC面上4H-SiC MOSデバイスの特性(シリコン関連材料の作製と評価)
- Ga_2O3-In_2O_3-ZnO(GIZO)薄膜を用いた薄膜トランジスタの劣化(TFTの材料・デバイス技術・応用及び一般)
- 4H-SiC nMOSFETおよびpMOSFETに対するチャージポンピング測定(シリコン関連材料の作製と評価)
- 高圧水蒸気処理によるSiO_2/4H-SiC界面改質とMOSFET特性(ゲート絶縁膜、容量膜、機能膜及びメモリ技術)
- 高圧水蒸気熱処理したSiO_2/4H-SiC界面特性の改善(シリコン関連材料の作製と評価)
- シリコンナノクリスタルドットの形成(半導体Si及び関連材料・評価)
- ダイナミックストレスに対するp型低温ポリシリコン薄膜トランジスタの信頼性評価
- 低温ポリシリコンTFTにおけるホットキャリア効果
- 低温ポリシリコンTFTにおけるダイナミックストレスに対する信頼性
- 低温ポリシリコンTFTにおけるダイナミックストレスに対する信頼性
- Investigation of Near-Interface Traps Generated by NO Direct Oxidation in C-face 4H-SiC Metal-Oxide-Semiconductor Structures
- Novel Stacked Nanodisk with Quantum Effect Fabricated by Defect-free Chlorine Neutral Beam Etching
- A New Silicon Quantum-Well Structure with Controlled Diameter and Thickness Fabricated with Ferritin Iron Core Mask and Chlorine Neutral Beam Etching
- Aluminum Induced Crystallization法を利用した多結晶Si薄膜の形成と評価
- Effect of High Magnetic Field on Copper Deposition from an Aqueous Solution
- 4H-SiC MOS界面へのリンの導入による界面準位密度の低減(シリコン関連材料の作製と評価)
- 低温Poly-Si TFTにおける発熱劣化の解析(シリコン関連材料の作製と評価)
- 極薄ゲートSiO_2膜Poly-Si CMOSトランジスタのホットキャリア劣化(シリコン関連材料の作製と評価)
- Side-Wall電極型PECVDによるSiナノドットメモリ(シリコン関連材料の作製と評価)
- 窒素励起活性種を用いたPLD-HfSixOy膜への窒素導入 : Hfの組成と窒素プロファイルの制御(ゲート絶縁膜,容量膜,機能膜及びメモリ技術)
- 励起活性種を用いた極薄シリコン窒化膜の低温形成と構造解析(ゲート絶縁膜,容量膜,機能膜及びメモリ技術)
- 励起活性種を用いた極薄ゲート酸窒化膜の低温形成
- Gate-Overlapped LDD構造をもつ低温ポリシリコン薄膜トランジスタの信頼性評価
- Gate-Overlapped LDD構造をもつ低温ポリシリコン薄膜トランジスタの信頼性評価
- Gate-Overlapped LDD構造をもつ低温ポリシリコン薄膜トランジスタの信頼性評価
- SC-8-12 Reliability of Low-Temperature Poly-Si Thin Film Transistors under Dynamic Stress
- Reliability Analysis of Ultra Low-Temperature Polycrystalline Silicon Thin-Film Transistors
- Crystallization of Double-Layered Silicon Thin Films by Solid Green Laser Annealing
- Crystallinity evaluation by microwave photoconductivity decay in double-layered polycrystalline silicon thin films crystallized by solid green laser annealing
- Low temperature polycrystalline silicon thin film transistors flash memory with silicon nanocrystal dot
- Reliability of low temperature polycrystalline silicon thin-film transistors with ultrathin gate oxide
- Evaluation of Crystallinity in 4H-SiC{0001} Epilayers Thermally Etched by Chlorine and Oxygen System
- Improvement of Reliability in Low-Temperature Polycrystalline Silicon Thin-Film Transistors by Water Vapor Annealing
- Floating Nanodot Gate Memory Devices Based on Biomineralized Inorganic Nanodot Array as a Storage Node
- Analysis of Photoelectrochemical Processes in α-SiC Substrates with Atomically Flat Surfaces
- Electron Injection into Si Nanodot Fabricated by Side-Wall Plasma Enhanced Chemical Vapor Deposition
- Fabrication of Anodic Oxidation Films on 4H-SiC at Room Temperature Using HNO_3-Based Electrolytes
- Role of Hydrogen in Dry Etching of Silicon Carbide Using Inductively and Capacitively Coupled Plasma
- High pressure water vapor annealing for improving HfSiO dielectrics properties
- Degradation in Low-Temperature Poly-Si Thin Film Transistors Depending on Grain Boundaries
- Gate Length Dependence of Hot Carrier Reliability in Low-Temperature Polycrystatline-Silicon P-Channel Thin Film Transistors
- Low Temperature Nitridation of Si Oxide Utilizing Activated Nitrogen(Semiconductors)
- Comprehensive Study on Reliability of Low-Temperature Poly-Si Thin-Film Transistors under Dynamic Complimentary Metal-Oxide Semiconductor Operations
- Hot Carrier Effect in Low-Temperature poly-Si p-ch Thin-Film Transistors under Dynamic Stress : Semiconductors
- Comprehensive Study on Reliability of Low-Temperature Poly-Si TFTs under Dynamic CMOS Operations
- Floating Gate MOS Capacitor with High-Density Nanodots Array Produced by Protein Supramolecule
- High-Density Floating Nanodots Memory Produced by Cage-Shaped Protein
- Fabrication of Defect-Free Sub-10nm Si Nanocolumn for Quantum Effect Devices Using Cl Neutral Beam Process
- Carrier Injection/Transport Characteristics of Photochromic Diarylethene Film : Surfaces, Interfaces, and Films
- Solution Electrochemiluminescent Cell with a High Luminance Using an Ion Conductive Assistant Dopant Optics and Quantum Electronics
- Solution Electrochemiluminescent Cell Using Tris(phenylpyridine) Iridium : Optics and Quantum Electronics
- デバイスシミュレーションによる低温ポリシリコンTFTの動作/信頼性解析
- デバイスシミュレーションによる低温ポリシリコンTFTの動作/信頼性解析
- Improving High-κ Gate Dielectric Properties by High-Pressure Water Vapor Annealing
- Strain in GaP Films Heteroepitaxially Grown on Si by Metalorganic Chemical Vapor Deposition
- Comparison between the photoluminescence Properties of LaPO_4 : Tb, Ce Phosphor under 254nm Excitation and those under 365nm Excitation
- Evaluation of InGaP/InGaAs/Ge Triple-Junction Solar Cell under Concentrated Light by Simulation Program with Integrated Circuit Emphasis
- Analysis of the Temperature Characteristics in Polycrystalline Si Solar Cells Using Modified Equivalent Circuit Model
- NH_3 Plasma Pretreatment of 4H-SiC(0001) Surface for Reduction of Interface States in Metal-Oxide-Semiconductor Devices
- 窒素励起活性種を用いたシリコン酸化膜の低温窒化
- 窒素励起活性種を用いたシリコン酸化膜の低温窒化
- 窒素励起活性種を用いたシリコン酸化膜の低温窒化
- Low-Temperature Microcrystalline Silicon Film Deposited by High-Density and Low-Potential Plasma Technique Using Hydrogen Radicals
- Effect of Nitrogen on Electrical and Physical Properties of Polyatomic Layer Chemical Vapor Deposition HfSi_xO_y Gate Dielectrics
- Determination of Minority-Carrier Lifetime in Multicrystalline Silicon Solar Cells using Current Transient Behaviors
- Analysis of Device Performance by Quasi Three-Dimensional Simulation for Thin Film Polycrystalline Silicon Solar Cells with Columnar Structure : Semiconductors
- Passivation Effect of Plasma Chemical Vapor Deposited SiNx on Single-Crystalline Silicon Thin-Film Solar Cells
- 7p-YH-1 3C-SiC/Siヘテロエピタキシー界面構造の原子層レベル制御
- Reliability of High-Frequency Operation of Low-Temperature Polysilicon Thin Film Transistors under Dynamic Stress
- p-チャネル低温ポリシリコン薄膜トランジスタの信頼性
- 次世代情報端末「システムオンパネル」の実現をめざして (特集 ナノ・ケモテクノロジーへの招待--奈良先端科学技術大学院大学物質創成科学研究科)
- Reliability of Low-Temperature Poly-Si Thin Film Transistors with Lightly Doped Drain Structures
- ダイナミックストレスに対するp型低温ポリシリコン薄膜トランジスタの信頼性評価 (低温ポリSi TFTと有機EL技術)
- Low Temperature Nitridation of Si Oxide Utilizing Activated Oxygen and Nitrogen
- Electrical Properties and Thermal Stability of Cu/6H-SiC Junctions : Electrical Properties of Condensed Matter
- ダイナミックストレスによる低温ポリシリコンTFTの信頼性評価(半導体Si及び関連電子材料評価)
- SiO_2/p型4H-SiC界面特性におけるPOCl_3アニールの効果(シリコン関連材料の作製と評価)
- SiGeC界面緩衝層を用いた3C-SiC/Siヘテロエピタキシー