Effect of Nitrogen on Electrical and Physical Properties of Polyatomic Layer Chemical Vapor Deposition HfSi_xO_y Gate Dielectrics
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-11-30
著者
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OKAMOTO Takeshi
Graduate School of Systems and Information Engineering, University of Tsukuba
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堀田 将
北陸先端科学技術大学院大学材料科学研究科
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URAOKA Yukiharu
Graduate School of Materials Science, Nara Institute of Science and Technology
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FUYUKI Takashi
Graduate School of Materials Science, Nara Institute of Science and Technology
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PUNCHAIPETCH Prakaipetch
Graduate School of Materials Science, Nara Institute of Science and Technology
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HORII Sadayoshi
Semiconductor Equipment System Laboratory, Hitachi Kokusai Electric Inc.
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NAKAMURA Hideki
Graduate School of Materials Science, Nara Institute of Science and Technology
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