Alignment of Grain Boundary in a Si film Crystallized by a Linearly Polarized Laser Beam on a Glass Substrate
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We performed crystallization of an amorphous Si film deposited on a Pyrex glass substrate using a Nd:YAG pulse-laser beam with linear polarization. It was found that, in the crystallized film, the grain boundaries were aligned with a period of about 550 nm or the wavelength of the laser beam. Meanwhile, in the Si film crystallized by circularly polarized beam that passed through the λ/4 plate, the grain boundaries were randomly generated. This means that linear polarization of the laser beam is essential to align grain boundaries periodically or to produce a periodic temperature distribution in the irradiated Si film.
- AMERICAN INSTITUTE OF PHYSICSの論文
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