Low Voltage Saturation of Ob(Zr_xTi_<1-x>O_3 Films on(100)Ir/(100)(ZrO_2)_<1-x>(Y_2O_3)_x/(100)Si Substrate Structure Prepared by Reactive Sputtering
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-04-30
著者
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堀田 将
北陸先端科学技術大学院大学材料科学研究科
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Horita Susumu
School Of Materials Science Japan Advanced Institute Of Science And Technology
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KUNIYA Takuji
School of Materials Science, Japan Advanced Institute of Science and Technology
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HORII Sadayoshi
School of Materials Science, Japan Advanced Institute of Science and Technology
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Kuniya Takuji
School Of Material Science Japan Advanced Institute Of Science And Technology
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YOKOYAMA Seiji
School of Material Science, Japan Advanced Institute of Science and Technology
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Yokoyama Seiji
School Of Material Science Japan Advanced Institute Of Science And Technology
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Hayashi Shigenori
Semiconductor Equipment System Laboratory Hitachi Kokusai Electric Inc.
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堀井 將
北陸先端科学技術大学院大学 材料科学研究科
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Yokoyama S
Research Center For Nanodevices And Systems Hiroshima University
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Horii Sadayoshi
School Of Material Science Japan Advanced Institute Of Science And Technology
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Yokoyama S
Kyushu Univ. Fukuoka Jpn
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