Hayashi Shigenori | Semiconductor Equipment System Laboratory Hitachi Kokusai Electric Inc.

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著作論文

直線偏光Nd:YAGレーザーによる規則性配列微細Siドットの形成(半導体Si及び関連材料・評価)
Increase of Dielectric Constant of an Epitaxial (100) Yttria-Stabilized Zirconia Film on (100) Si Substrate Deposited by Reactive Sputtering in the Metallic Mode : Surfaces, Interfaces, and Films
HF+ヒドラジン溶液処理をしたエピタキシャル(100)ZrN/(100)Si構造上への(100)Ir薄膜の作製
高コヒーレント直線偏光パルスレーザービームによる結晶化Si薄膜の粒界位置制御
Low Temperature Heteroepitaxial Growth of a New Phase Lead Zirconate Titanate Film on Si Substrate with an Epitaxial(ZrO_2)_(Y_2O_3)_x Buffer Layer
エピタキシャルZrN膜/(100)Si基板上に形成したPZT薄膜の強誘電体特性
エピタキシャルZrN薄膜/(100)Si基板上に形成したPZT薄膜の強誘電体特性
(100)YSZ/(100)Si基板構造上にスパッタ法により形成したヘテロエピタキシャル(100)Ir及び(001)PZT薄膜の膜質特性
(100)YSZ/(100)Si基板構造上にスパッタ法により形成したヘテロエピタキシャル(100)Ir及び(001)PZT薄膜の膜質特性
スパッタ法によるシリコン基板上へのPb(Zr,Ti)O_3(PZT)薄膜のヘテロエピタキシャル成長
Material Properties of Heteroepitaxial Ir and Pb (Zr_xTi_) O_3 Films on (100) (ZrO_2)_(Y_2O_3)_x/(100) Si Structure Prepared by Sputtering
反応性スパッタ法によるSi基板上へのY組成制御YSZ薄膜のヘテロエピタキシャル成長
Characterization of Pb(Zr_xTi_)O_3 Thin Film on Silicon Substrate with Heteroepitaxial Yttria-Stabilized Zirconia (YSZ) Buffer Layer
Low Voltage Saturation of Ob(Zr_xTi_O_3 Films on(100)Ir/(100)(ZrO_2)_(Y_2O_3)_x/(100)Si Substrate Structure Prepared by Reactive Sputtering
Determination of Material Thermal Properties Using Photoacoustic Signals Detected by a Transparent Transducer
Analysis of Pyroelectric Signal in Photoacoustic Spectroscopy Using a Transparent Transducer
Influence of Piezoelectric and Pyroelectric Effects on Signal of PAS Using a Transparent Transducer : Photoacoustic Spectroscopy and Ultrasonic Imaging
Theoretical Analysis of Photoacoustic Signal on PAS Using a Transparent Transducer : Photoacoustic Effect and Spectroscopy
Consideration on PA Signals of Multilayer Structure Measured by PAS Using Transparent Transducer : Photoacoustic Spectroscopy
Evaluation of Multilayer Structure and Depth Profile by PAS Using a Transparent Transducer : Photoacoustic Spectroscopy
Evaluation of Ion Implantation into Silicon Photoacoustic Spectroscopy using Transparent Transducer Method : Photoacoustic Spectroscopy
Thickness Dependence of Material Properties of Epitaxial Pb(Zr_xTi_)O_3 Films on Ir/(100) (ZrO_2)_(Y_2O_3)_x(100)Si Structures
Metal-Organic Chemical Vapor Deposition of HfO_2 by Alternating Supply of Tetrakis-Diethylamino-Hafnium and Remote-Plasma Oxygen
Atomic-scale Characterization and Control of the HfO_2/Si(001) Interface
Radical Behavior in Inductively Coupled Fluorocarbon Plasma for SiO2 Etching

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