Horita Susumu | Japan Advanced Inst. Sci. And Technol. Ishikawa Jpn
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概要
関連著者
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Horita Susumu
Japan Advanced Inst. Sci. And Technol. Ishikawa Jpn
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Kaki Hirokazu
Japan Advanced Institute Of Science And Technology
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Horita Susumu
Japan Advanced Institute Of Science And Technology
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KHOA Tran
Japan Advanced Institute of Science and Technology
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NAKATA Yasunori
Japan Advanced Institute of Science and Technology
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Trinh Bui
Japan Advanced Institute for Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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Sukreen Hana
Japan Advanced Institute Of Science And Technology
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堀田 将
北陸先端科学技術大学院大学材料科学研究科
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YOKOYAMA Seiji
School of Material Science, Japan Advanced Institute of Science and Technology
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Yokoyama Seiji
School Of Material Science Japan Advanced Institute Of Science And Technology
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Hayashi Shigenori
Semiconductor Equipment System Laboratory Hitachi Kokusai Electric Inc.
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堀井 將
北陸先端科学技術大学院大学 材料科学研究科
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Yokoyama S
Research Center For Nanodevices And Systems Hiroshima University
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Horii Sadayoshi
Delegated from Kokusai Electric Co., Ltd.
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Yokoyama Seiji
Japan Advanced Institute of Science and Technology, School of Material Science
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Nakajima Hideki
Japan Advanced Institute of Science and Technology, School of Material Science
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Yokoyama S
Kyushu Univ. Fukuoka Jpn
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Nakajima Hideki
Japan Advanced Institute Of Science And Technology School Of Material Science
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Trinh Bui
Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Tatsunokuchi, Ishikawa 923-1292, Japan
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Nishioka Kensuke
Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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Khoa Tran
Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Tatsunokuchi, Ishikawa 923-1292, Japan
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Nakata Yasunori
Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Tatsunokuchi, Ishikawa 923-1292, Japan
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Kaki Hirokazu
Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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Kaki Hirokazu
Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Tatsunokuchi, Ishikawa 923-1292, Japan
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Horita Susumu
Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
著作論文
- Low Temperature Deposition and Crystallization of Silicon Film on an HF-Etched Polycrystalline Yttria-Stabilized Zirconia Layer Rinsed with Ethanol Solution
- Nondestructive Readout of Ferroelectric-Gate Field-Effect Transistor Memory With an Intermediate Electrode by Using an Improved Operation Method
- Thickness Dependence of Material Properties of Epitaxial Pb(Zr_xTi_)O_3 Films on Ir/(100) (ZrO_2)_(Y_2O_3)_x(100)Si Structures
- Retention and Read Endurance Characteristics of a Ferroelectric Gate Field Effect Transistor Memory with an Intermediate Electrode
- Influence of the Beam Irradiation Conditions on an Si Film Melting-Crystallized by a Nd:YAG Pulse Laser Beam with Linear Polarization
- Influence of the Beam Irradiation Conditions on an Si Film Melting-Crystallized by a Nd:YAG Pulse Laser Beam with Linear Polarization
- Control of Preferential Orientation of Platinum Films on RuO2/SiO2/Si Substrates by Sputtering
- Multireflection Effect on Formation of Periodic Surface Structure on an Si Film Melting-Crystallized by a Linearly Polarized Nd:YAG Pulse Laser Beam
- Retention and Read Endurance Characteristics of a Ferroelectric Gate Field Effect Transistor Memory with an Intermediate Electrode
- Operation of Ferroelectric Gate Field-Effect Transistor Memory with Intermediate Electrode using Polycrystalline Capacitor and Metal–Oxide–Semiconductor Field-Effect Transistor