Trinh Bui | Japan Advanced Institute for Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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概要
- Trinh Bui Nguyen Quocの詳細を見る
- 同名の論文著者
- Japan Advanced Institute for Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japanの論文著者
関連著者
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Trinh Bui
Japan Advanced Institute for Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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Horita Susumu
Japan Advanced Inst. Sci. And Technol. Ishikawa Jpn
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Miyasako Takaaki
Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, Nomi, Ishikawa 923-1211, Japan
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Trinh Bui
Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Tatsunokuchi, Ishikawa 923-1292, Japan
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Trinh Bui
Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, Nomi, Ishikawa 923-1211, Japan
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Kaneda Toshihiko
Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-5-3 Asahidai, Nomi, Ishikawa 923-1211, Japan
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Tokumitsu Eisuke
Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-5-3 Asahidai, Nomi, Ishikawa 923-1211, Japan
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Shimoda Tatsuya
Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-5-3 Asahidai, Nomi, Ishikawa 923-1211, Japan
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Tue Phan
School of Material Science, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292, Japan
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Onoue Masatoshi
Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, Nomi, Ishikawa 923-1211, Japan
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Tokumitsu Eisuke
Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, Nomi, Ishikawa 923-1211, Japan
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Kaneda Toshihiko
Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, Nomi, Ishikawa 923-1211, Japan
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Shimoda Tatsuya
Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, Nomi, Ishikawa 923-1211, Japan
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Shimoda Tatsuya
Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
著作論文
- Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process
- Control of Preferential Orientation of Platinum Films on RuO2/SiO2/Si Substrates by Sputtering
- Operation of Ferroelectric Gate Field-Effect Transistor Memory with Intermediate Electrode using Polycrystalline Capacitor and Metal–Oxide–Semiconductor Field-Effect Transistor