Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process

スポンサーリンク

概要

• 論文の詳細を見る

• We have fabricated inorganic ferroelectric-gate thin-film transistors (FGTs) using only a chemical solution deposition (CSD) process. All layers, including the LaNiO3 (LNO) gate electrode, Pb(Zr,Ti)O3 (PZT) ferroelectric-gate insulator, indium--tin-oxide (ITO) source/drain electrodes, and ITO channel, were formed on a SrTiO3 (STO) substrate by the CSD process. We obtained a local epitaxially grown PZT/LNO perovskite heterostructure with good crystalline quality and no interfacial layer. The fabricated FGT exhibited typical n-channel transistor operation, with a counterclockwise hysteresis loop due to the ferroelectric nature of the PZT-gate insulator, and also exhibited good drain current saturation in output characteristics. These properties are equivalent to or better than those obtained with FGTs fabricated by means of conventional vacuum processes. The obtained on/off current ratio, memory window, and subthreshold voltage swing were about $10^{6}$, 2.5 V, and 357 mV/decade, respectively.

• 2011-04-25

著者

• Miyasako Takaaki

  Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, Nomi, Ishikawa 923-1211, Japan

• Trinh Bui

  Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, Nomi, Ishikawa 923-1211, Japan

• Trinh Bui

  Japan Advanced Institute for Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

• Kaneda Toshihiko

  Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-5-3 Asahidai, Nomi, Ishikawa 923-1211, Japan

• Tokumitsu Eisuke

  Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-5-3 Asahidai, Nomi, Ishikawa 923-1211, Japan

• Shimoda Tatsuya

  Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-5-3 Asahidai, Nomi, Ishikawa 923-1211, Japan

• Tue Phan

  School of Material Science, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292, Japan

• Onoue Masatoshi

  Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, Nomi, Ishikawa 923-1211, Japan

• Tokumitsu Eisuke

  Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, Nomi, Ishikawa 923-1211, Japan

• Kaneda Toshihiko

  Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, Nomi, Ishikawa 923-1211, Japan

• Shimoda Tatsuya

  Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, Nomi, Ishikawa 923-1211, Japan

• Shimoda Tatsuya

  Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

関連論文

• Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process
• Improvement of Sol–Gel Derived PbZrxTi1-xO3 Film Properties Using Thermal Press Treatment
• Micropatterning of Indium Tin Oxide Thin Films by Selective Deposition and Improvement in Selectivity by Combination with Substrate Vibration
• Control of Preferential Orientation of Platinum Films on RuO2/SiO2/Si Substrates by Sputtering
• Operation of Ferroelectric Gate Field-Effect Transistor Memory with Intermediate Electrode using Polycrystalline Capacitor and Metal–Oxide–Semiconductor Field-Effect Transistor

スポンサーリンク