Improvement of Sol–Gel Derived PbZrxTi1-xO3 Film Properties Using Thermal Press Treatment

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概要

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• A thermal press treatment was introduced in the sol–gel process of PbZrxTi1-xO3 (PZT) thin films for the first time and the crystalline and electrical characteristics of the PZT films were investigated. The thermal press treatment was applied to the amorphous PZT gel film before crystallization annealing. It is found that the crystalline orientation and grain size of the PZT film fabricated with the thermal press treatment are different from those of the film fabricated by the conventional sol–gel process without the thermal press treatment, even though the crystallization conditions are exactly the same. It is demonstrated that the electrical properties, especially leakage current density and breakdown field, are significantly improved for the PZT film fabricated with the thermal press treatment. Furthermore, we also demonstrate that the fatigue property is improved by introducing the thermal press treatment.

• 2010-09-25

著者

• Kim Joo-Nam

  Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259-R2-19 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

• Kaneda Toshihiko

  Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-5-3 Asahidai, Nomi, Ishikawa 923-1211, Japan

• Tokumitsu Eisuke

  Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-5-3 Asahidai, Nomi, Ishikawa 923-1211, Japan

• Shimoda Tatsuya

  Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-5-3 Asahidai, Nomi, Ishikawa 923-1211, Japan

• Shimoda Tatsuya

  Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

関連論文

• Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process
• Improvement of Sol–Gel Derived PbZrxTi1-xO3 Film Properties Using Thermal Press Treatment
• Micropatterning of Indium Tin Oxide Thin Films by Selective Deposition and Improvement in Selectivity by Combination with Substrate Vibration

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