Operation of Ferroelectric Gate Field-Effect Transistor Memory with Intermediate Electrode using Polycrystalline Capacitor and Metal–Oxide–Semiconductor Field-Effect Transistor
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概要
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We have investigated the basic operation of a ferroelectric gate field-effect transistor (F-FET) memory with an intermediate electrode for data writing, using a discrete circuit which consists of a polycrystalline ferroelectric capacitor connected serially to the gate of a commercial n-channel metal–oxide–semiconductor (MOSFET). By sputtering, a ferroelectric capacitor $C_{\text{f}}$ was formed as a (RuO2 top electrode)/poly-Pb(Zr0.52Ti0.48)O3(PZT)/(Pt/RuO2 bottom electrode) structure on a SiO2/Si substrate. The readout characteristics showed nondestructive operation. It was also shown that the output voltage for the positive and the negative polarization memory states corresponded very well with the intermediate electrode voltages on the gate of the MOSFET. Furthermore, the ratio of the ferroelectric capacitor to the input capacitor of the MOSFET was found to be an important factor influencing the cycle number of nondestructive reading and the difference in output voltage between the positive and negative polarization states.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-09-30
著者
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Horita Susumu
Japan Advanced Inst. Sci. And Technol. Ishikawa Jpn
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Trinh Bui
Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Tatsunokuchi, Ishikawa 923-1292, Japan
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Trinh Bui
Japan Advanced Institute for Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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- Operation of Ferroelectric Gate Field-Effect Transistor Memory with Intermediate Electrode using Polycrystalline Capacitor and Metal–Oxide–Semiconductor Field-Effect Transistor