Low Temperature Deposition and Crystallization of Silicon Film on an HF-Etched Polycrystalline Yttria-Stabilized Zirconia Layer Rinsed with Ethanol Solution
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概要
- 論文の詳細を見る
As an induction layer for Si crystallization, an yttria-stabilized zirconia (YSZ) film was deposited on a glass substrate. The YSZ layer, already etched with HF and rinsed with ethanol, was heated to 430 °C. The Si film deposited on it was partially crystallized. This was confirmed by transmission electron microscope. The crystallization fraction was greater than that on a YSZ layer rinsed by deionized water. Without using YSZ layer, deposited Si film was amorphous. F atoms in HF-etching solution were adsorbed on the YSZ layer and remained even after the ethanol rinse. These remaining F may be important for crystallization.
- The Japan Society of Applied Physicsの論文
- 2009-04-25
著者
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Sukreen Hana
Japan Advanced Institute Of Science And Technology
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Horita Susumu
Japan Advanced Inst. Sci. And Technol. Ishikawa Jpn
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Horita Susumu
Japan Advanced Institute Of Science And Technology
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- Low Temperature Deposition and Crystallization of Silicon Film on an HF-Etched Polycrystalline Yttria-Stabilized Zirconia Layer Rinsed with Ethanol Solution
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