Nakagawa Hideo | Association Of Super-advanced Electronics Technologies(aset)
スポンサーリンク
概要
関連著者
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Kubota M
Opto-electronics Laboratories Oki Electric Industry Co. Ltd.
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Nakagawa Hideo
Association Of Super-advanced Electronics Technologies(aset)
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Yamanaka M
Electron Devices Division Electrotechnical Laboratory
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Hayashi Shinji
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kobe University
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Hayashi S
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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Hayashi Shigenori
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Hayashi Shigenori
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corporation
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Hayashi Shigenori
Faculty Of Engineering Osaka University
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NAKAGAWA Hideo
Association of Super-Advanced Electronics Technologies (ASET)
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Yamanaka Michinari
Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.
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KUBOTA Masafumi
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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Kubota Masafumi
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Yamanaka Michinari
Semiconductor Research Center, Matsushita Electric Ind. Co. Ltd.,
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NAKAGAWA Hideo
Semiconductor Company, Matsushita Electric Industrial Co. Ltd.
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YAMANAKA Michinari
ULSI Process Technology Development Center, Matsushita Electric Industrial Co., Ltd.
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Hayashi Shigenori
Semiconductor Equipment System Laboratory Hitachi Kokusai Electric Inc.
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Hayashi Shigenori
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co.
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Yamanaka Michinari
Ulsi Process Technology Development Center Matsushita Electric Industrial Co. Ltd.
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KUBOTA Masafumi
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporatio
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Kubota Masafumi
Ulsi Process Technology Development Center Matsushita Electronics Corporation
著作論文
- Highly Selective SiO2 Etching Using Inductively Coupled Plasma Source with a Multispiral Coil
- Radical Behavior in Inductively Coupled Fluorocarbon Plasma for SiO2 Etching
- RIE-Lag Reduction by NH_3 Addition in Aluminum Alloy Etching under BCl_3/Cl_2 Chemistry