Yamanaka Michinari | Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.
スポンサーリンク
概要
関連著者
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Yamanaka Michinari
Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.
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Yamanaka M
Electron Devices Division Electrotechnical Laboratory
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Yamanaka Michinari
Semiconductor Research Center, Matsushita Electric Ind. Co. Ltd.,
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Fujii T
Institute Of Industrial Science University Of Tokyo
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Fujii T
Tohoku Univ. Sendai Jpn
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Kubota M
Opto-electronics Laboratories Oki Electric Industry Co. Ltd.
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Nakagawa Hideo
Association Of Super-advanced Electronics Technologies(aset)
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Sekiguchi Mitsuru
Semiconductor Research Center Matsushita Electric Ind.co.ltd.
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KUBOTA Masafumi
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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Kubota Masafumi
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Sekiguchi Mitsuru
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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Hayashi Shinji
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kobe University
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NAKAGAWA Hideo
Semiconductor Company, Matsushita Electric Industrial Co. Ltd.
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Hayashi S
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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Hayashi Shigenori
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Hayashi Shigenori
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corporation
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Hayashi Shigenori
Semiconductor Equipment System Laboratory Hitachi Kokusai Electric Inc.
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Hayashi Shigenori
Faculty Of Engineering Osaka University
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Fukumoto Masanori
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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NAKAGAWA Hideo
Association of Super-Advanced Electronics Technologies (ASET)
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Sekiguchi Mitsuru
Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.
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Fujii Toyokazu
Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.
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FUJII Toyokazu
Kyoto Research Laboratory, Matsushita Electronics Co.
著作論文
- A Novel Al/TiN/CVD-W Structure to Eliminate Resistance Anomaly in Deep Submicron Al/CVD-W Interconnects
- Radical Behavior in Inductively Coupled Fluorocarbon Plasma for SiO2 Etching
- RIE-Lag Reduction by NH_3 Addition in Aluminum Alloy Etching under BCl_3/Cl_2 Chemistry
- Suppression of Resistance Increase in Al/W Interconnects by N_2 Plasma Treatment