KUBOTA Masafumi | ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporatio
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概要
- 同名の論文著者
- ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporatioの論文著者
関連著者
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Hayashi Shinji
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kobe University
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YAMANAKA Michinari
ULSI Process Technology Development Center, Matsushita Electric Industrial Co., Ltd.
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Hayashi S
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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Hayashi Shigenori
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Hayashi Shigenori
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corporation
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Hayashi Shigenori
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co.
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Hayashi Shigenori
Faculty Of Engineering Osaka University
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Kubota M
Opto-electronics Laboratories Oki Electric Industry Co. Ltd.
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Yamanaka M
Electron Devices Division Electrotechnical Laboratory
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Yamanaka Michinari
Ulsi Process Technology Development Center Matsushita Electric Industrial Co. Ltd.
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KUBOTA Masafumi
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporatio
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Kubota Masafumi
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Ogura M
Jst‐crest Ibaraki Jpn
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Ogura Masahiko
Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog
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OGURA Mototsugu
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporatio
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Aoi Nobuo
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corporation
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NAKAGAWA Hideo
Association of Super-Advanced Electronics Technologies (ASET)
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Nakagawa Hideo
Association Of Super-advanced Electronics Technologies(aset)
著作論文
- Contact Hole Etch Scaling toward 0.1 μm
- Spatial and Temporal Behavior of Radicals in Inductively Coupled Plasm for SiO_2 Etching
- Highly Selective SiO2 Etching Using Inductively Coupled Plasma Source with a Multispiral Coil