Ogura Masahiko | Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog

スポンサーリンク

概要

関連著者

もっと見る

著作論文

Studies on the structure of crescent-shaped GaAs quantum wires by combination of electron microscopy and photoluminescence spectroscopy
Proposal of a New Self-Limited Growth and Its Application to the Fabrication of Atomically Uniform Quantum Nanostructures
Electron States in Crescent GaAs Coupled Quantum-Wires
Fabrication of Quantum Wire and Minute Buried Heterostructure by In Situ Etching and Selective MOCVD Growth
Selective Growth of Buried n^+ Diamond on (001) Phosphorus-Doped n-Type Diamond Film
Nanometer Scale Height Standard Using Atomically Controlled Diamond Surface
Exciton-derived Electron Emission from (001) Diamond p-n Junction Diodes with Negative Electron Affinity
High-Efficiency Excitonic Emission with Deep-Ultraviolet Light from (001)-Oriented Diamond p-i-n Junction
n-Type Control by Sulfur Ion Implantation in Homoepitaxial Diamond Films Grown by Chemical Vapor Deposition
Distributed Feed Back Surface Emitting Laser Diode with Multilayered Heterostructure
GaAs/Al_xGa_As Multilayer Reflector for Surface Emitting Laser Diode
Investigation of Ultrafast Carrier Dynamics in Quantum Wire by Terahertz Time-Domain Spectroscopy
Femtosecond Pump-Probe Spectroscopy of GaAs Crescent Quantum Wires
Excitation Wavelength Dependence of Terahertz Electromagnetic Wave Generation from Quantum Wire
Ultrafast Coherent Control of Excitons and Exciton-Polaritons in Quantum Nanostructure
Ultrafast Coherent Control of Excitons in Quantum Nano-Structures
Electron Emission from a Diamond (111) p-i-n^+ Junction Diode with Negative Electron Affinity during Room Temperature Operation
Contact Hole Etch Scaling toward 0.1 μm
Spatial and Temporal Behavior of Radicals in Inductively Coupled Plasm for SiO_2 Etching
Fundamental Characteristic of Capillary-Type Cluster Ion Source and Its Application for Selective Deposition of Aluminum Film : Etching and Deposition Technology
Fundamental Characteristics of Capillary-Type Cluster Ion Source and Its Application for Selective Deposition of Aluminum Film
MOCVD Growth and Characterization of (Al_xGa_)_yIn_P/GaAs
A New AsH_3 Cracking Method for the MOCVD Growth of InGaAs
InP MESFET Grown by MOCVD
Maskless Selective Growth Method for pn Junction Applications on (001)-Oriented Diamond (SELECTED TOPICS IN APPLIED PHYSICS : Diamond Semiconductors : from Materials to Devices)
High-Voltage Vacuum Switch with a Diamond p--i--n Diode Using Negative Electron Affinity
Maskless Selective Growth Method for p--n Junction Applications on (001)-Oriented Diamond

もっと見る

スポンサーリンク