OKUSHI Hideyo | Electrotechnical Laboratory
スポンサーリンク
概要
関連著者
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OKUSHI Hideyo
Electrotechnical Laboratory
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TANAKA Kazunobu
Electrotechnical Laboratory
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Yamasaki Satoshi
Joint Research Center For Atom Technology-national Institute For Advanced Interdisciplinary Research
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Yamasaki S
National Inst. Advanced Interdisciplinary Res. Tsukuba Jpn
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YAMASAKI Shuichi
Superconducting Sensor Laboratory
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YAMASAKI Satoshi
Electrotechnical Laboratory
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Yamasaki S
Joint Res. Center For Atom Technol. (jrcat) Tsukuba Jpn
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MATSUDA Akihisa
Electrotechnical Laboratory
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OHYAMA Hideaki
Electrotechnical laboratory
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OHEDA Hidetoshi
Electrotechnical Laboratory
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TOKUMARU Yozo
Electrotechnical Laboratory
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IIZIMA Sigeru
Electrotechnical Laboratory
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OKUSHI Hideyo
Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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MATSUMURA Mitsuo
TOA Nenryo Kogyo K.K.
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Okushi H
Electrotechnical Lab. Ibaraki Jpn
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Okushi Hideyo
Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog
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Yamasaki S
Nec Corp. Kanagawa Jpn
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Hata N
Electrotechnical Lab. Ibaraki Jpn
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Hata Nobuhiro
Electrotechnical Laboratory
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Okamura Takeshi
Electrotechnical Laboratory
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WATANABE Hideyuki
Electrotechnical Laboratory
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YAMAMOTO Hideo
Electrotechnical Laboratory
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Nakagawa Katsumi
Electrotechnical Laboratory
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Yamanaka Sadanori
Nanotechnology Research Institute National Institute Of Advanced Industrial Science And Technology (
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YAMANAKA Shoji
Faculty of Engineering,Hiroshima University
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Seki Y
Sumitomo Electric Ind. Ltd. Hyogo Jpn
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Seki Yoji
Central Research Laboratory Kyocera Corporation
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Seki Yoji
Central R&d Laboratoy Japan Energy Corporation
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WATANABE Hideyuki
Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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KAJIMURA Koji
Electrotechnical Laboratory, Tsukuba Research Center
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Watanabe Hirohito
Institute Of Material Science University Of Tsukuba
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Okamura T
Central Research Laboratory Kyocera Corporation
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Okamura Takeshi
Department Of Electronics Faculty Of Engineering Kyoto University
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Okamura Takeshi
Electrotechnical Laboratory:(present Address) Central Research Laboratory Kyocera Corporation
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Watanabe H
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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TAKEUCHI Daisuke
Electrotechnical Laboratory
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YAMANAKA Sadanori
Electrotechnical Laboratory
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YAMAMOTO Hideo
TOA Nenryo K.K.
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Watanabe H
Semiconductor Leading Edge Technol. Inc. Yokohama Jpn
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Fujimoto Masayuki
Taiyo Yuden Co. Lid.
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WATANABE Hajime
ULSI Laboratory, Mitsubishi Electric Corporation
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Kajimura K
Electrotechnical Laboratory
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Kajimura Koji
Electrotechnical Laboratory
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Tachiki Minoru
School Of Science And Engineering:crest Jst (japan Science And Technology Corporation)
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Takeuchi Daisuke
Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog
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Nagakari S
R&d Center Kagoshima Kyocera Corporation
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Nagakari Shoken
Central Research Laboratory Kyocera Corporation
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Okamura T
Optical Disks Development Department Division Of Information And Devices Technologies Asahi Chemical
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Tachiki M
Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog
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Morito Kentaro
Taiyo Yuden Co. Ltd.
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Taniuchi Hirotada
School Of Science And Engineering Waseda University
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Watanabe Hideo
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Sekiguchi Shoichi
Taiyo Yuden Co. Ltd.
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SUZUKI Toshimasa
Taiyo Yuden Co Ltd, R&D Center
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SUZUKI Tatsuya
Research Laboratory for Nuclear Reactors, Tokyo Institute of Technology
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Fujimoto Masahiro
Faculty Of Engineering Hiroshima University
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Suzuki Takamasa
Department Of Electronics Nagoya University:r&d Department Nippondenso Co. Ltd.
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Suzuki T
Free Electron Laser Research Institute Inc.
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Suzuki T
Taiyo Yuden Co. Ltd. Gunma Jpn
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Tajima Michio
Electrotechnical Laboratory
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Suzuki T
Nhk (japan Broadcasting Corp.) Tokyo
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ABE Takao
Shin-Etsu Handotai Company, Limited
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KIKUCHI Makoto
Electrotechnical Laboratory
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MORITO Kentaro
Taiyo Yuden Co. Ltd.,
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SUZUKI Toshimasa
Taiyo Yuden Co., Ltd.,
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FUJIMOTO Masayuki
Taiyo Yuden Co., Ltd.,
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KOBAYASHI Naoto
Electrotechnical Laboratory
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MATSUURA Hideharu
Electrotechnical Laboratory
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OKUNO Tetsuhiro
Electrotechnical Laboratory
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Suzuki Tatsuro
Department Of Electrical Engineering Shizuoka University
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BANDYOPADHYAY A.
Indian Association for the Cultivation of Science
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BANERJEE Ratnabali
Indian Association for the Cultivation of Science
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BATABYAL A.
Indian Association for the Cultivation of Science
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BARUA A.
Indian Association for the Cultivation of Science
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Abe Takao
Shin-etsu Handotai
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HASEGAWA Masataka
Electrotechnical Laboratory
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OGURA Masahiko
Electrotechnical Laboratory
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MASAI Shigeo
Electrotechnial Laboratory
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KAWAI Hiroshi
Electrotechnical Laboratory
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HOTTA Masahiro
Electrotechnical Laboratory
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YOSHIDA Toshihiko
TOA Nenryo K.K.
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NAKAGAWA Katumi
Electrotechnical Laboratory
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YAMASAKI Satoshi
TOA Nenryo Kogyo K.K.
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IMURA Takeshi
Osaka University
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TANINO Hiroshi
Electrotechnical Laboratory
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Tokumaru Yozo
Chuo University
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Tokumaru Yozo
Electrotechnical Laboratoty
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Suzuki Tatsuhiko
Department Of Electrical Engineering Faculty Of Engineering Science University Of Tokyo
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Suzuki Toshiharu
Sony Sc Ulsi R&d Laboratories
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FUJISADA Hiroyuki
Electrotechnical Laboratory
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Watanabe Hideyuki
Electrotechnical Laboratory:crest(core Research For Evolutional Science And Technology) Jst(japan Sc
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Suzuki T
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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SEKIGUCHI Shoichi
Taiyo Yuden Co., Ltd.
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Fujimoto M
Taiyo Yuden Co. Ltd.
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Barua A
Indian Assoc. Cultivation Of Sci. Kolkata Ind
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Masai Shigeo
Electrotechnial Laboratory:tokai University
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Ogura M
Jst‐crest Ibaraki Jpn
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Okushi Hideyo
Electrotechnical Laboratory:crest(core Research For Evolutional Science And Technology) Jst(japan Sc
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Ogura Masahiko
Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog
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Suzuki T
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Okuno Tetsuhiro
Electrotechnical Laboratory:sharp Corporation
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MASUI Tsumoru
Shin-Etsu Handotai Co. Ltd.
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Suzuki T
Taiyo Yuden Co. Ltd.
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Okushi Hideyo
Electrotechnical Laboratoty
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Suzuki T
Tdk Corp. Chiba Jpn
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Bandyopadhyay A
Indian Assoc. Cultivation Of Sci. Calcutta Ind
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Fujisada H
Electrotechnical Laboratoty
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MATSUMURA Mitsuo
Electrotechnical Laboratory
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Sekiguchi S
Taiyo Yuden Co. Ltd.
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Abe Takao
Shin-etsu Handotai Co. Ltd.
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Kikuchi Makoto
Electorotechnical Laboratory
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NAKA Hiroyoshi
Micronics Japan Co., Ltd.
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Naka Hiroyoshi
Micronics Japan Co. Ltd.
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Morita Kentaro
Taiyo Yuden Co., Ltd.
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Okushi Hideyo
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
著作論文
- Ohmic Contact Properties of Magnesium Evaporated onto Undoped and P-doped a-Si: H
- A Photoluminescence Study of Amorphous-Microcrystalline Mixed-Phase Si: H Films
- Determination of the Optical Constants of Thin Films Using Photoacoustic Spectroscopy
- Effect of Light Soaking Temperature on the Metastable Defect Distribution in Magnetron Sputtered Hydrogenated Amorphous Silicon Films
- n-Type Control by Sulfur Ion Implantation in Homoepitaxial Diamond Films Grown by Chemical Vapor Deposition
- High-Quality B-Doped Homoepitaxial Diamond Films using Trimethylboron
- The Staebler-Wronski Effect on Defect Luminescence in Hydrogenated Amorphous Silicon
- Characteristics of Schottky Barrier Diodes in P-doped Amorphous Si : H : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization
- Gap-State Profiles of a-Si: H Deduced from Below-Gap Optical Absorption
- Gap States Distribution of Undoped a-Si: H Determined with Phase-Shift Analysis of the Modulated Photocurrent
- Determination of the Density of State Distribution of a-Si: H by Isothermal Capacitance Transient Spectroscopy
- Characteristics of Schottky Barrier Diodes in Reactively Sputtered Amorphous Si:H : III-3: AMORPHOUS SOLAR CELLS : Device Physics
- Boron Doping of Hydrogenated Silicon Thin Films
- Electrical Characterization of SrTiO_3 Thin Films Grown on Nb-Doped SrTiO_3 Single Crystals
- Nonlinear Effects Excitonic Emission from High Quality Homoepitaxial Diamond Films
- Junction Properties and Gap States of ZnO Thin Film Prepared by Sol-Get Process
- Preparation of n-ZnO/p-Si Heterojunction by Sol-Gel Process
- DLTS Measurement on Au-Doped Si p^+n Junctions and Its Computer Simulation
- Deep Levels Associated with Nitrogen in Silicon
- A Modulated DLTS Method for Large Signal Analysis (C^2-DLTS)
- Deep Levels in n-Type Undoped and Te-doped InSb Crystals
- Isothermal Capacitance Transient Spectroscopy for Determination of Deep Level Parameters
- Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H Films
- A New Model for the Carrier Transport in Amorphous Si: H Schottky Barrier Diodes : II-3: AMORPHOUS SEMICONDUCTOR PHOTOVOLTAIC DEVICES
- Transient Carrier Transport in Relaxation Case GaAs
- Carrier Transport in p^+-v Junction Based on Relaxation Semiconductors. II. Experiment
- Carrier Transport on p^+-v Junction Based on Relaxation Semiconductors. I. Theory
- Highly Sensitive Raman Spectroscopy by a Position-Sensitive Photomultiplier and a Triple-Stage Spectrograph with Stigmatic Optical Correction
- Electrical Characterization of SrTiO3 Thin Films Grown on Nb-Doped SrTiO3 Single Crystals
- Scanning Isothermal Current Transient Spectroscopy (SICTS) and Its Application to the Microscopic Distribution Measurement of Gap States in Hydrogenated Amorphous Silicon Films"
- Junction Properties and Gap States in Nb-Doped TiO_2 Thin Films