YAMASAKI Shuichi | Superconducting Sensor Laboratory
スポンサーリンク
概要
関連著者
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Yamasaki S
National Inst. Advanced Interdisciplinary Res. Tsukuba Jpn
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YAMASAKI Shuichi
Superconducting Sensor Laboratory
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Yamasaki Satoshi
Joint Research Center For Atom Technology-national Institute For Advanced Interdisciplinary Research
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Yamasaki S
Nec Corp. Kanagawa Jpn
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Yamasaki S
Joint Res. Center For Atom Technol. (jrcat) Tsukuba Jpn
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YAMASAKI Satoshi
Electrotechnical Laboratory
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MATSUDA Akihisa
Electrotechnical Laboratory
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TANAKA Kazunobu
Electrotechnical Laboratory
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OKUSHI Hideyo
Electrotechnical Laboratory
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OHYAMA Hideaki
Electrotechnical laboratory
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OHEDA Hidetoshi
Electrotechnical Laboratory
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Hayashi Shigenobu
National Institute Of Materials And Chemical Research
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Hayashi Shinji
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kobe University
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HAYAMIZU Kikuko
National Institute of Materials and Chemical Research
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Hasezaki Kazuhiro
Mitsubishi Heavy Industries Ltd.
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Hayashi Shigenori
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corporation
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Hayashi Shigenori
Faculty Of Engineering Osaka University
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Hayashi Shigenobu
National Chemical Laboratory For Industry
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Hayamizu K
National Institute Of Materials And Chemical Research
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TANAKA Kazunobu
Joint Research Center for Atom Technology(JRCAT)
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Abe Takayuki
Ulsi Research Center Toshiba Corp.
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Hayashi S
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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YAMASAKI Satoshi
ULSI research Center, Toshiba Corp.
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YOSHIKAWA Ryoichi
ULSI research Center, Toshiba Corp.
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TAKIGAWA Tadahiro
ULSI research Center, Toshiba Corp.
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MATSUMURA Mitsuo
TOA Nenryo Kogyo K.K.
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IIZIMA Sigeru
Electrotechnical Laboratory
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Yamasaki Satoshi
Joint Research Center For Atom Technology(jrcat):national Institute For Advanced Interdisciplinary R
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Tanaka Kazunobu
Joint Research Center For Atom Technology (jrcat):national Institute For Advanced Interdisciplinary
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Yoshikawa Ryoichi
Ulsi Research Laboratories Toshiba Corporation
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Hayamizu Kikuko
National Chemical Laboratory For Industry
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Takigawa T
Semiconductor Components Operations Dai Nippon Printing Co. Ltd.
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Takigawa Tadahiro
Ulsi Research Center Toshiba Corp
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Yamasaki Satoshi
Joint Research Center For Atom Technology (jrcat) National Institute For Advanced Interdisciplinary
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Yoshikawa Ryoichi
Ulsi Research Center Toshiba Corporation
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Yamasaki Satoshi
ULSI Device Development Laboratories, NEC Corporation
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YASUDA Tetsuji
Joint Research Center for Atom Technology (JRCAT)
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SUZUKI Atsushi
Electrotechnical Laboratory
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IKUTA Kazuyuki
Joint Research Center for Atom Technology-National Institute for Advanced Interdisciplinary Research
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Suzuki A
Department Of Electrical Engineering And Electronics College Of Engineering Osaka Sangyo University
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Hata N
Electrotechnical Lab. Ibaraki Jpn
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Hata Nobuhiro
Electrotechnical Laboratory
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Yasuda T
Joint Research Center For Atom Technology (jrcat)
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Yasuda Tetsuji
Joint Research Center For Atom Technology(jrcat):national Institute For Advanced Interdisciplinary R
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Yasuda Tetsuji
Joint Research Center For Atom Technolog (jrcat)
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MASHIMA Satoshi
Electrotechnical Laboratory
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MCELHENY Peter
Electrotechnical Laboratory
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YAMAMOTO Hideo
Electrotechnical Laboratory
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Yasuda T
Joint Research Center For Atom Technology(jrcat):national Institute For Advanced Interdisciplinary R
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Suzuki Atsushi
Biodevelopment Division Central Institute Nagoya Seiraku Co. Ltd.
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Suzuki Atsushi
Department Of Applied Biological Chemistry Faculty Of Agriculture University Of Niigata
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Suzuki Atsushi
Synthetic Crystal Research Laboratory Faculty Of Engineering Nagoya University
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Suzuki Atsushi
Department Of Pathology Obstetrics And Gynecology Keio University School Of Medicine
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Suzuki Atsushi
Department Of Physics School Of Science And Engineering Waseda University
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Suzuki Atsushi
Basic Research Department Prima Meat Packers Co. Ltd.
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Suzuki Atsushi
Department Of Applied Biochemistry Faculty Of Agriculture University Of Niigata
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Suzuki A
Department Of Obstetrics And Gynecology Keio University School Of Medicine
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Ikuta K
Department Of Electronic Device Engineering Graduate School Of Information Science And Electrical En
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Mcelheny P
Electrotechnical Laboratory
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Yasuda Takeshi
Department Of Applied Science For Electronics And Materials Graduate School Of Engineering Sciences
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Yasuda Tsutomu
Faculty Of Engineering Tokyo Institute Of Technology
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Nakagawa Katsumi
Electrotechnical Laboratory
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Adachi Akira
Superconducting Sensor Laboratory
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Takada Youichi
Superconducting Sensor Laboratory
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Kado Hisashi
Electrotechnical Laboratory
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Matsuda N
Aist Tosu‐shi Jpn
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Uehara Gen
Applied Electronics Laboratory, Kanazawa Institute of Technology
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Itoh M
Institute Of Applied Physics University Of Tsukuba
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Itoh M
Institute Of Industrial Science University Of Tokyo
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HWANG Doo-Sup
Joint Research Center for Atom Technology-Angstrom Technology Partnership
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Uehara G
Applied Electronics Laboratory Kanazawa Institute Of Technology
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Uehara Gen
Superconducting Sensor Laboratory
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Uehara Gen
Superconducting Sensor Laboratory:(present Address) Yokogawa Electric Co.
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Uehara Gen
Department Of Mathematical Engineering And Instrumentation Physics Faculty Of Engineering University
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Uehara Gen
Yokogawa Electric Corporation
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Adachi A
Toshiba Corp. Otawara‐shi Jpn
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Kado H
Applied Electronic Laboratory Kanazawa Institute Of Technology
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Kado Hisashi
Electrotechnical Laboratory Agency Of Industrial Science And Technology
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Takada Y
Superconducting Sensor Laboratory
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Takada Y
Nippon Steel Corp. Chiba Jpn
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Itoh M
Research Laboratory Of Engineering Materials Tokyo Institute Of Technology
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Mizutani Naoki
Superconducting Sensor Laboratory
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ITOH Masayuki
Integrated Circuit Advanced Process Engineering Deaprtment, Toshiba Corp.
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YOSHIDA Toshihiko
TOA Nenryo K.K.
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YAMAMOTO Hideo
TOA Nenryo K.K.
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Uehara Gen
Applied Electronics Laboratory Kanazawa Institute Of Technology
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Kado H
Superconducting Sensor Laboratory:(present Address) Tokyo Office Of Human Information System Laborat
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Kado Hisashi
Applied Electronic Laboratory Kanazawa Institute Of Technology
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Shigemitsu Fumiaki
Integrated Circuit Advanced Process Engineering Deaprtment Toshiba Corp.
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田中 皓一
名古屋工業大学
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MORI Kazuteru
Joint Research Center for Atom Technology(JRCAT)
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NISHIZAWA Masayasu
Joint Research Center for Atom Technology(JRCAT)
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Tajima Michio
Electrotechnical Laboratory
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MATSUURA Hideharu
Electrotechnical Laboratory
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OKUNO Tetsuhiro
Electrotechnical Laboratory
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Tanaka Kazunobu
Joint Research Center For Atom Technology(jrcat):university Of Tsukuba Institute Of Material Science
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SHIGEMITU Fumiaki
Integrated Circuit Advanced Process Engineering Deaprtment, Toshiba Corp.
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SHIGEMITSU Fumiaki
Integrated Circuit Advanced Process Engineering Department, Toshiba Corp.
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YAMAGUCHI Toshio
ULSI Research Center, Toshiba Corporation
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TOYOSHIMA Yasutake
Electrotechnical Laboratory
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YAMASAKI Satoshi
National Institute for Advanced Interdisciplinary Research
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Mashima Satoshi
Central Glass Technical Center
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Hasezaki Kazuhiro
Mitsubishi Heavy Industries
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KAWAI Hiroshi
Electrotechnical Laboratory
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HOTTA Masahiro
Electrotechnical Laboratory
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TOKUMARU Yozo
Electrotechnical Laboratory
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MATUDA Akihisa
Electrotechnical Laboratory
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NAKAGAWA Katumi
Electrotechnical Laboratory
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YAMASAKI Satoshi
TOA Nenryo Kogyo K.K.
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IMURA Takeshi
Osaka University
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Yamaguchi Taichi
Superconductivity Research Dept. Material Research Lab. Fujikura Ltd. :(present Address)quality Assu
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Hayashi Shigenori
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Matsuda A
Department Of Electrical And Electronic Engineering Faculty Of Engineering Toyama University
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Okuno Tetsuhiro
Electrotechnical Laboratory:sharp Corporation
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Mori Kazuteru
Joint Research Center For Atom Technology(jrcat):university Of Tsukuba Institute Of Material Science
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Tanaka K
National Institute For Fusion Science
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Nishizawa Masayasu
Joint Research Center For Atom Technology(jrcat):angstrom Technology Partnership(atp)
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MATSUMURA Mitsuo
Electrotechnical Laboratory
著作論文
- Effects of Chemical Composition and Morphology of Substrate Surfaces on Crustallinity of Ultrathin Hydrogenated Microcrystalline Silicon Films
- Selective Area Growth of Si on Thin Insulating Layers for Nanostructure Fabrication
- Ohmic Contact Properties of Magnesium Evaporated onto Undoped and P-doped a-Si: H
- A Photoluminescence Study of Amorphous-Microcrystalline Mixed-Phase Si: H Films
- Determination of the Optical Constants of Thin Films Using Photoacoustic Spectroscopy
- Fabrication of High-Quality Nb/Al-AlO_x-Al/Nb Junctions by a Simple Process
- Fabrication and Evaluation of Superconducting Quantum Interference Devices with Nb/Al-AlO_x-Al/Nb Edge Junctions
- Performance Evaluation of Representative Figure Method for Proximity Effect Correction : Electron Beam Lithography
- Performance Evaluation of Representative Figure Method for Proximity Effect Correction
- Representative Figure Method for Proximity Effect Correction [II]
- Representative Figure Method for Proximity Effect Correction
- Hydrogen-Initiated Nucleation and Growth of Hydrogenated Amorphous Silicon on Graphite
- Substrate Temperature Dependence of Deuteron Bonding States in Deuterated Amorphous Silicon Studied by ^2H Nuclear Magnetic Resonance
- ^1H Nuclear Magnetic Resonance Study of Hydrogen Distribution in Partially Deuterated Hydrogenated Amorphous Silicon
- Structural Differences between Hydrogenated and Deuterated Amorphous Silicon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
- The Staebler-Wronski Effect on Defect Luminescence in Hydrogenated Amorphous Silicon
- ^P Nuclear Magnetic Resonance Study of Local Bonding Configuration of Phosphorus in Amorphous Silicon-Hydrogen-Phosphorus Alloys
- Silicon-29 Nuclear Magnetic Resonance Study of Amorphous-Microcrystalline Mixed-Phase Hydrogenated Silicon
- Characteristics of Schottky Barrier Diodes in P-doped Amorphous Si : H : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization
- Anomalous Optical and Structural Properties of B-Doped a-Si:H
- Gap-State Profiles of a-Si: H Deduced from Below-Gap Optical Absorption
- Gap States Distribution of Undoped a-Si: H Determined with Phase-Shift Analysis of the Modulated Photocurrent
- Determination of the Density of State Distribution of a-Si: H by Isothermal Capacitance Transient Spectroscopy
- Structural Study on Amorphous-Microcrystalline Mixed-Phase Si:H Films
- Characteristics of Schottky Barrier Diodes in Reactively Sputtered Amorphous Si:H : III-3: AMORPHOUS SOLAR CELLS : Device Physics
- Boron Doping of Hydrogenated Silicon Thin Films
- ^1H Nuclear Magnetic Resonance Study of Hydrogenated Amorphous Silicon Deposited from a Xe-diluted Silane Plasma
- Comparative Evaluation of Ultrathin Mask Layers of SiO_2, SiO_x, and SiN_x for Selective Area Growth of Si
- Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H Films
- A New Model for the Carrier Transport in Amorphous Si: H Schottky Barrier Diodes : II-3: AMORPHOUS SEMICONDUCTOR PHOTOVOLTAIC DEVICES