Hydrogen-Initiated Nucleation and Growth of Hydrogenated Amorphous Silicon on Graphite
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-03-15
著者
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Yamasaki Satoshi
Joint Research Center For Atom Technology-national Institute For Advanced Interdisciplinary Research
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Yamasaki S
National Inst. Advanced Interdisciplinary Res. Tsukuba Jpn
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MATSUDA Akihisa
Electrotechnical Laboratory
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TANAKA Kazunobu
Joint Research Center for Atom Technology(JRCAT)
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IKUTA Kazuyuki
Joint Research Center for Atom Technology-National Institute for Advanced Interdisciplinary Research
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Yamasaki S
Joint Res. Center For Atom Technol. (jrcat) Tsukuba Jpn
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Yamasaki S
Nec Corp. Kanagawa Jpn
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YAMASAKI Shuichi
Superconducting Sensor Laboratory
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TOYOSHIMA Yasutake
Electrotechnical Laboratory
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Ikuta K
Department Of Electronic Device Engineering Graduate School Of Information Science And Electrical En
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Yamasaki Satoshi
Joint Research Center For Atom Technology(jrcat):national Institute For Advanced Interdisciplinary R
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Tanaka Kazunobu
Joint Research Center For Atom Technology (jrcat):national Institute For Advanced Interdisciplinary
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Yamasaki Satoshi
Joint Research Center For Atom Technology (jrcat) National Institute For Advanced Interdisciplinary
関連論文
- Characteristics of Superconducting Gd-Ba-Cu-O Thin Films
- Thermal Stability of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD method : Surfaces, Interfaces and Films
- Effect of Laser-Induced Dissociation during Measurements of Hydrogen Atoms in Silane Plasmas Using Two-Photon-Excited Laser-Induced Fluorescence
- In situ ESR Observation of Interface Dangling Bond Formation Processes During Ultrathin SiO2 Growth On Si(111)
- EPR studies of the isolated negatively charged silicon vacancies in n-type 4H- and 6H-SiC: Identification of C3v symmetry and silicon sites
- Electron Spin Resonance Observation of the Si(111)- (7×7) Surface and Its Oxidation Process
- Effects of Chemical Composition and Morphology of Substrate Surfaces on Crustallinity of Ultrathin Hydrogenated Microcrystalline Silicon Films
- Microscopic origin of light-induced ESR centers in undoped hydrogenated amorphous silicon
- Electron-spin-resonance center of dangling bonds in undoped a-Si:H
- Selective Area Growth of Si on Thin Insulating Layers for Nanostructure Fabrication
- Electronic Structure of Band-Tail Electrons in a Si:H
- Coherent Anti-Stokes Raman Spectroscopy of Radio-Frequency Discharge Plasmas of Silane and Disilane
- Ohmic Contact Properties of Magnesium Evaporated onto Undoped and P-doped a-Si: H
- Detection of Neutral Species in Silane Plasma Using Coherent Anti-Stokes Raman Spectroscopy
- A Photoluminescence Study of Amorphous-Microcrystalline Mixed-Phase Si: H Films
- Determination of the Optical Constants of Thin Films Using Photoacoustic Spectroscopy
- Fabrication of High-Quality Nb/Al-AlO_x-Al/Nb Junctions by a Simple Process
- Fabrication and Evaluation of Superconducting Quantum Interference Devices with Nb/Al-AlO_x-Al/Nb Edge Junctions
- Performance Evaluation of Representative Figure Method for Proximity Effect Correction : Electron Beam Lithography
- Performance Evaluation of Representative Figure Method for Proximity Effect Correction
- Representative Figure Method for Proximity Effect Correction [II]
- Representative Figure Method for Proximity Effect Correction
- Hydrogen-Initiated Nucleation and Growth of Hydrogenated Amorphous Silicon on Graphite
- Substrate Temperature Dependence of Deuteron Bonding States in Deuterated Amorphous Silicon Studied by ^2H Nuclear Magnetic Resonance
- ^2D and ^1H Nuclear Magnetic Resonance Study of Deuterated Amorphous Silicon and Partially Deuterated Hydrogenated Amorphous Silicon
- ^1H Nuclear Magnetic Resonance Study of Hydrogen Distribution in Partially Deuterated Hydrogenated Amorphous Silicon
- Structural Differences between Hydrogenated and Deuterated Amorphous Silicon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
- The Staebler-Wronski Effect on Defect Luminescence in Hydrogenated Amorphous Silicon
- ^P Nuclear Magnetic Resonance Study of Local Bonding Configuration of Phosphorus in Amorphous Silicon-Hydrogen-Phosphorus Alloys
- Silicon-29 Nuclear Magnetic Resonance Study of Amorphous-Microcrystalline Mixed-Phase Hydrogenated Silicon
- Characteristics of Schottky Barrier Diodes in P-doped Amorphous Si : H : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization
- Anomalous Optical and Structural Properties of B-Doped a-Si:H
- Gap-State Profiles of a-Si: H Deduced from Below-Gap Optical Absorption
- Gap States Distribution of Undoped a-Si: H Determined with Phase-Shift Analysis of the Modulated Photocurrent
- Determination of the Density of State Distribution of a-Si: H by Isothermal Capacitance Transient Spectroscopy
- Structural Study on Amorphous-Microcrystalline Mixed-Phase Si:H Films
- Characteristics of Schottky Barrier Diodes in Reactively Sputtered Amorphous Si:H : III-3: AMORPHOUS SOLAR CELLS : Device Physics
- Boron Doping of Hydrogenated Silicon Thin Films
- ^1H Nuclear Magnetic Resonance Study of Hydrogenated Amorphous Silicon Deposited from a Xe-diluted Silane Plasma
- Plasma Enhanced Chemical Vapour Deposition of Hydrogenated Amorphous Silicon from Dichlorosilane and Silane Gas Mixtures
- Annealing Energy Distribution of Light-Induced Defects of Hydrogenated Amorphous Silicon Films Grown from Silane and Dichlorosilane Gas Mixtures
- Comparison of Defect Annealing Kinetics of a-Si:H Prepared by Pure Silane and Helium Diluted Silane by Triode Plasma Chemical Vapour Deposition
- The Effect of Mesh Bias and Substrate Bias on the Properties of a-Si:H Deposited by Triode Plasma Chemical Vapour Deposition
- Characterization of Hydrogenated Amorphous Silicon Films by a Pulsed Positron Beam
- Comparative Evaluation of Ultrathin Mask Layers of SiO_2, SiO_x, and SiN_x for Selective Area Growth of Si
- Non-Contact and Non-Destructive Measurement of Carrier Concentration of Nitrogen-Doped ZnSe by Reflectance Difference Spectroscopy
- Classification of Inhomogeneities in Hydrogenated Amorphous Silicon
- Geometrical Form Factor Improvement for Receiving System of Infrared Lidar
- Differential Absorption Lidar at 1.67 μm for Remote Sensing of Methane Leakage
- Spatial Distribution of SiH_3 Radicals in RF Silane Plasma
- SiH_3 Radical Density in Pulsed Silane Plasma
- Effect of Ion Bombardment on the Properties of Hydrogenated Amorphous Silicon Prepared from Undiluted and Xenon-Diluted Silane
- In Situ Ultraviolet Laser Treatment during Plasma Deposition for the Improvement of Film Qualities in Hydrogenated Amorphous Silicon
- Absence of Correlation between Disorder and Defect Density in Hydrogenated Amorphous Silicon
- Effects of Electrode Distance on Plasma Parameters and a-Si:H Film Properties in Plasma CVD Process
- Very High Hydrogen Dilution Induced Novel Phenomena of Electronic Transport Properties in Hydrogenated Microcrystalline Silicon-Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Method
- Scanning Tunneling Microscopy Study of Ultrathin Fe Films Growrn on GaAs (001) Surface
- Growth of Crystal Silicon Films from Chlorinated Silanes by RF Plasma-Enhanced Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Low-Temperature Plasma-Enhanced Chemical Vapor Deposition of Crystal Silicon Film from Dichlorosilane
- Transport Properties of Buried AlGaAs/GaAs Quantum Wires
- Conical Liner Implosion as a Projectile Injector for Mass Drivers
- Upper-bound Frequency for Measuring mm-Wave-Band Dielectric Characteristics of Thin Films on Semiconductor Substrates
- High-Frequency Characteristics of SrTiO_3 Thin Films in the mm-Wave Band
- Measurement of High-Frequency Dielectric Characteristics in the mm-Wave Band for Dielectric Thin Films on Semiconductor Substrates
- High-Frequency Characteristics of SrTiO_3 Thin Films in the mm-Wave Band
- Scanning Probe Microscopy and Lithography of Ultrathin Si_3N_4 Films Grown on Si(111) and Si(001)
- Role of Hydrogen Atoms in the Formation Process of Hydrogenated Microcrystalline Silicon
- Electrical Properties of Pulsed Laser Crystallized Silicon Films
- Guiding Principle in the Preparation of High-Photosensitive Hydrogenated Amorphous Si-Ge Alloys from Glow-Discharge Plasma
- Importance of Charged Dangling Bonds in Explaining the Photodegradation Behavior of Amorphous Silicon Films Prepared by Various Techniques
- Wide-Rrange Control of Crystallite Size and Its Orientation in Glow-Discharge Deposited μc-Si:H
- Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H Films
- A New Model for the Carrier Transport in Amorphous Si: H Schottky Barrier Diodes : II-3: AMORPHOUS SEMICONDUCTOR PHOTOVOLTAIC DEVICES
- Very High Hydrogen Dilution Induced Novel Phenomena of Electronic Transport Properties in Hydrogenated Microcrystalline Silicon-Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Method
- Effect of Ion Bombardment on the Growth and Properties of Hydrogenated Amorphous Silicon-Germanium Alloys
- Glow-Discharge Deposition of Amorphous Silicon from SiH_3F
- Influence of Power-Source Frequency on the Properties of GD a-Si:H
- Glow-Discharge Deposition of a-Si: H from Pure Si_2H_6 and Pure SiH_4
- Defect Formation Process during Growth of Hydrogenated Amorphous Silicon at High Temperatures
- A Shaped Projectile for Hypervelocity Impact as a Driver of Nuclear Fusion
- Magneto-Inertia Confinement in Dynamic Z-Pinch
- Electromagnetic Acceleration of Macroparticles to Hypervelocities in Axisymmetric Geometry
- Hypervelocity Accelerators with Electro-Thermo-Chemical Reaction
- Control of defect density in a-Si : H by surface processes
- Electron and Ion Energy Controls in a Radio Frequency Discharge Plasma with Silane