Electron and Ion Energy Controls in a Radio Frequency Discharge Plasma with Silane
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概要
- 論文の詳細を見る
Electron and ion energy distribution functions are controlled in a radio-frequency (rf) discharge plasma with silane for production of hydrogenated amorphous silicon films. We apply the grid-bias method to an rf silane plasma in order to obtain a low electron-temperature ($T_{\rm e}\simeq 0.2$ eV) and low ion-temperature ($T_{\rm i}\simeq 0.1$ eV) plasma. The ion beam energy is controlled by biasing the substrate. We find that the room temperature hole drift mobility is increased by two orders of magnitude compared to the conventional value at an ion beam energy between 23 eV and 24 eV.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-07-30
著者
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MATSUDA Akihisa
Electrotechnical Laboratory
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Ganguly Gautam
Electrotechnical Laboratory
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Ikeda Tohru
Electrotechnical Laboratory
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Iizuka Satoru
Department Of Electrical Engineering Graduate School Of Engineering Tohoku University
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Sato Noriyoshi
Department Of Electrical Engineering Tohoku University
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Ganguly Gautam
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305, Japan
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Iizuka Satoru
Department of Electronic Engineering, Tohoku University, Aoba-ku, Sendai, Miyagi 980-77, Japan
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Sato Noriyoshi
Department of Electronic Engineering, Tohoku University, Aoba-ku, Sendai, Miyagi 980-77, Japan
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Kato Kohgi
Department of Electronic Engineering, Tohoku University, Aoba-ku, Sendai, Miyagi 980-77, Japan
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Kato Kohgi
Department of Chemical Engineering, Ichinoseki National College of Technology, Ichinoseki, Iwate 021-8511, Japan
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Ikeda Tohru
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305, Japan
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