Role of Hydrogen Atoms in the Formation Process of Hydrogenated Microcrystalline Silicon

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概要

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• We have investigated the role of hydrogen atoms in the formation process of the hydrogenated microcrystalline silicon (μc-Si:H) by using a layer-by-layer deposition technique in which an abundance of H atoms were supplied after the growth of every several monolayers of films. It has been found that whether or not μc-Si:H is formed is strongly dependent on the parameters (substrate temperature and waiting time before the growth of every several monolayers after H_2 plasma is turned off ) which change the hydrogen coverage of the top surface, These experimental results illustrate the idea that the major role of H atoms for μc-Si:H formation is not to make "growth-zone" reactions below the top surface but to achieve sufficient hydrogen coverage of the top growing surface.

• 社団法人応用物理学会の論文
• 1990-08-20

著者

• MATSUDA Akihisa

  Electrotechnical Laboratory

• Ganguly Gautam

  Indian Association For The Cultivation Of Science

• NOMOTO Katsuhiko

  Sharp Corporation, Energy Conversion Laboratories

• URANO Yuichi

  Tokai University

• GUIZOT Jean

  Electrotechnical Laboratory

• Nomoto Katsuhiko

  Sharp Corporation Energy Conversion Laboratories

関連論文

• Characteristics of Superconducting Gd-Ba-Cu-O Thin Films
• Thermal Stability of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD method : Surfaces, Interfaces and Films
• Effect of Laser-Induced Dissociation during Measurements of Hydrogen Atoms in Silane Plasmas Using Two-Photon-Excited Laser-Induced Fluorescence
• Coherent Anti-Stokes Raman Spectroscopy of Radio-Frequency Discharge Plasmas of Silane and Disilane
• Ohmic Contact Properties of Magnesium Evaporated onto Undoped and P-doped a-Si: H
• Detection of Neutral Species in Silane Plasma Using Coherent Anti-Stokes Raman Spectroscopy
• A Photoluminescence Study of Amorphous-Microcrystalline Mixed-Phase Si: H Films
• Determination of the Optical Constants of Thin Films Using Photoacoustic Spectroscopy
• Hydrogen-Initiated Nucleation and Growth of Hydrogenated Amorphous Silicon on Graphite
• Substrate Temperature Dependence of Deuteron Bonding States in Deuterated Amorphous Silicon Studied by ^2H Nuclear Magnetic Resonance
• ^2D and ^1H Nuclear Magnetic Resonance Study of Deuterated Amorphous Silicon and Partially Deuterated Hydrogenated Amorphous Silicon
• ^1H Nuclear Magnetic Resonance Study of Hydrogen Distribution in Partially Deuterated Hydrogenated Amorphous Silicon
• Structural Differences between Hydrogenated and Deuterated Amorphous Silicon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
• ^P Nuclear Magnetic Resonance Study of Local Bonding Configuration of Phosphorus in Amorphous Silicon-Hydrogen-Phosphorus Alloys
• Silicon-29 Nuclear Magnetic Resonance Study of Amorphous-Microcrystalline Mixed-Phase Hydrogenated Silicon
• Anomalous Optical and Structural Properties of B-Doped a-Si:H
• Gap-State Profiles of a-Si: H Deduced from Below-Gap Optical Absorption
• Gap States Distribution of Undoped a-Si: H Determined with Phase-Shift Analysis of the Modulated Photocurrent
• Characteristics of Schottky Barrier Diodes in Reactively Sputtered Amorphous Si:H : III-3: AMORPHOUS SOLAR CELLS : Device Physics
• Boron Doping of Hydrogenated Silicon Thin Films
• ^1H Nuclear Magnetic Resonance Study of Hydrogenated Amorphous Silicon Deposited from a Xe-diluted Silane Plasma
• Plasma Enhanced Chemical Vapour Deposition of Hydrogenated Amorphous Silicon from Dichlorosilane and Silane Gas Mixtures
• Annealing Energy Distribution of Light-Induced Defects of Hydrogenated Amorphous Silicon Films Grown from Silane and Dichlorosilane Gas Mixtures
• Comparison of Defect Annealing Kinetics of a-Si:H Prepared by Pure Silane and Helium Diluted Silane by Triode Plasma Chemical Vapour Deposition
• The Effect of Mesh Bias and Substrate Bias on the Properties of a-Si:H Deposited by Triode Plasma Chemical Vapour Deposition
• Characterization of Hydrogenated Amorphous Silicon Films by a Pulsed Positron Beam
• Classification of Inhomogeneities in Hydrogenated Amorphous Silicon
• Spatial Distribution of SiH_3 Radicals in RF Silane Plasma
• SiH_3 Radical Density in Pulsed Silane Plasma
• Effect of Ion Bombardment on the Properties of Hydrogenated Amorphous Silicon Prepared from Undiluted and Xenon-Diluted Silane
• In Situ Ultraviolet Laser Treatment during Plasma Deposition for the Improvement of Film Qualities in Hydrogenated Amorphous Silicon
• Absence of Correlation between Disorder and Defect Density in Hydrogenated Amorphous Silicon
• Effects of Electrode Distance on Plasma Parameters and a-Si:H Film Properties in Plasma CVD Process
• Very High Hydrogen Dilution Induced Novel Phenomena of Electronic Transport Properties in Hydrogenated Microcrystalline Silicon-Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Method
• Role of Hydrogen Atoms in the Formation Process of Hydrogenated Microcrystalline Silicon
• Electrical Properties of Pulsed Laser Crystallized Silicon Films
• Guiding Principle in the Preparation of High-Photosensitive Hydrogenated Amorphous Si-Ge Alloys from Glow-Discharge Plasma
• Importance of Charged Dangling Bonds in Explaining the Photodegradation Behavior of Amorphous Silicon Films Prepared by Various Techniques
• Wide-Rrange Control of Crystallite Size and Its Orientation in Glow-Discharge Deposited μc-Si:H
• Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H Films
• A New Model for the Carrier Transport in Amorphous Si: H Schottky Barrier Diodes : II-3: AMORPHOUS SEMICONDUCTOR PHOTOVOLTAIC DEVICES
• Very High Hydrogen Dilution Induced Novel Phenomena of Electronic Transport Properties in Hydrogenated Microcrystalline Silicon-Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Method
• Effect of Ion Bombardment on the Growth and Properties of Hydrogenated Amorphous Silicon-Germanium Alloys
• Glow-Discharge Deposition of Amorphous Silicon from SiH_3F
• Influence of Power-Source Frequency on the Properties of GD a-Si:H
• Glow-Discharge Deposition of a-Si: H from Pure Si_2H_6 and Pure SiH_4
• Defect Formation Process during Growth of Hydrogenated Amorphous Silicon at High Temperatures
• Control of defect density in a-Si : H by surface processes
• Electron and Ion Energy Controls in a Radio Frequency Discharge Plasma with Silane

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