Guiding Principle in the Preparation of High-Photosensitive Hydrogenated Amorphous Si-Ge Alloys from Glow-Discharge Plasma
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概要
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A guiding principle has been proposed for the preparation of high-photosensitive hydrogenated amorphous Si-Ge alloys (a-SiGe:H) via the plasma chemical-vapor-deposition technique. According to this principle, plasma parameters in a diode-type reactor were systematically controlled, resulting in high-quality a-SiGe:H films in the optical-gap range between 1.4 and 1.8 eV. Photoconductivity-to-dark-conductivity ratio of the best-designed a-SiGe:H with 1.45 eV optical gap was found to reach 10^4.
- 社団法人応用物理学会の論文
- 1986-01-20
著者
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MATSUDA Akihisa
Electrotechnical Laboratory
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TANAKA Kazunobu
Electrotechnical Laboratory
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Koyama Masato
Electrotechnical Laboratory
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IKUCHI Nozomu
Electrotechnical Laboratory
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IMANISHI Yuichiro
Electrotechnical Laboratory
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